| Presentation | 2023-12-01 Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer Ruka Watanabe, Kenta Kobayashi, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In the fabrication of vertical-cavity surface-emitting lasers (VCSELs), high controllability of the resonance wavelength, in other words cavity length, is essential. In GaAs-based VCSELs, an in-situ reflectivity spectra measurement during the epitaxial growth have been reported as a useful tool for the precise cavity length control. The use of this tool is also expected to improve the controllability of GaN-based VCSELs, and this research group reported the cavity length control of GaN-based VCSELs with the above measurement. On the other hand, there are ITO electrode and Nb2O5 spacer formed in the subsequent process steps in that cavity, and in-situ reflectivity spectra measurements during epitaxial growth is insufficient. In this report, we first deposited ITO or Nb2O5 on GaN cavity samples controlled by in-situ reflectivity spectra measurements to obtain the thickness dependence of the resonance wavelength shift, in other words the information including the refractive index. Next, we fabricated a GaN-based VCSEL with a 4λ cavity including ITO electrode and Nb2O5 spacer based on a layer design using the derived refractive index. As a result, we demonstrated room-temperature continuous operation of a GaN-based VCSEL with a difference from the designed resonance wavelength of less than 0.3% and an optical output power of 11 mW. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor / VCSEL / cavity length control / in-situ reflectivity spectra measurement |
| Paper # | ED2023-32,CPM2023-74,LQE2023-72 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / ED / CPM |
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| Conference Date | 2023/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
| Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer |
| Sub Title (in English) | |
| Keyword(1) | semiconductor |
| Keyword(2) | VCSEL |
| Keyword(3) | cavity length control |
| Keyword(4) | in-situ reflectivity spectra measurement |
| 1st Author's Name | Ruka Watanabe |
| 1st Author's Affiliation | Meijo University(Meijo Univ.) |
| 2nd Author's Name | Kenta Kobayashi |
| 2nd Author's Affiliation | Meijo University(Meijo Univ.) |
| 3rd Author's Name | Mitsuki Yanagawa |
| 3rd Author's Affiliation | Meijo University(Meijo Univ.) |
| 4th Author's Name | Tetsuya Takeuchi |
| 4th Author's Affiliation | Meijo University(Meijo Univ.) |
| 5th Author's Name | Satoshi Kamiyama |
| 5th Author's Affiliation | Meijo University(Meijo Univ.) |
| 6th Author's Name | Motoaki Iwaya |
| 6th Author's Affiliation | Meijo University(Meijo Univ.) |
| Date | 2023-12-01 |
| Paper # | ED2023-32,CPM2023-74,LQE2023-72 |
| Volume (vol) | vol.123 |
| Number (no) | ED-288,CPM-289,LQE-290 |
| Page | pp.pp.80-83(ED), pp.80-83(CPM), pp.80-83(LQE), |
| #Pages | 4 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |