| Presentation | 2023-11-30 Formation of p-type GaN by Mg thermal diffusion and challenges for device applications Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ion implantation, which is a typical impurity doping technique, the control of p-type conductivity is difficult because of Mg segregation defects and donor defects formed during ion implantation and recovery annealing. Therefore, we focused on the Mg thermal diffusion method, which has relatively few defects formed during doping. It has been considered that the low Mg diffusion coefficient in GaN crystals prevents Mg thermal diffusion doping from achieving a suitable diffusion length for device design. However, by using a unique Mg diffusion source, we have succeeded in enhancing the thermal diffusion of Mg, obtaining a diffusion length of several hundred nm, and fabricating and evaluating GaN that exhibits good p-type conductivity by heat treatment under atmospheric pressure. In this presentation, we report on the Mg thermal diffusion doping process and the evaluation of p-type conductivity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / selective doping / Mg ion implantation / Mg diffsuion / p-GaN |
| Paper # | ED2023-19,CPM2023-61,LQE2023-59 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / ED / CPM |
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| Conference Date | 2023/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
| Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of p-type GaN by Mg thermal diffusion and challenges for device applications |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | selective doping |
| Keyword(3) | Mg ion implantation |
| Keyword(4) | Mg diffsuion |
| Keyword(5) | p-GaN |
| 1st Author's Name | Yuta Itoh |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Hirotaka Watanabe |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Manato Deki |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Shugo Nitta |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Atsushi Tanaka |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 6th Author's Name | Yoshio Honda |
| 6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 7th Author's Name | Hiroshi Amano |
| 7th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2023-11-30 |
| Paper # | ED2023-19,CPM2023-61,LQE2023-59 |
| Volume (vol) | vol.123 |
| Number (no) | ED-288,CPM-289,LQE-290 |
| Page | pp.pp.25-30(ED), pp.25-30(CPM), pp.25-30(LQE), |
| #Pages | 6 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |