| Presentation | 2023-11-30 Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD Toshiharu Kubo, Takashi Egawa, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue for normally-off type AlGaN/GaN MIS-HFETs with recessed gate structure using ALD-SiO2/Al2O3 double insulator. In order to improve the I/S interface after etching, we have fabricated MIS-HFETs with HCl and annealing treatments and evaluated the electrical properties. We confirmed that the RMS of the etched surface decreased to almost the same value as that before etching by the surface treatment combining HCl treatment and 500℃ annealing. Furthermore, ΔVth decreased to 0.56 V. In this study, we investigated the temperature dependence of Ig and found that the Ig was reduced by two orders of magnitude by the surface treatment and the Ig was suppressed under 5.6×10-6 mA/mm even by increasing the temperature up to 200℃. We confirmed that the surface treatment by HCl and annealing treatments is effective for the etching surface, and it is possible to fabricate devices with reduced etching damage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / HFET / SiO2 / Al2O3 |
| Paper # | ED2023-16,CPM2023-58,LQE2023-56 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / ED / CPM |
|---|---|
| Conference Date | 2023/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
| Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | HFET |
| Keyword(4) | SiO2 |
| Keyword(5) | Al2O3 |
| 1st Author's Name | Toshiharu Kubo |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Technol.) |
| 2nd Author's Name | Takashi Egawa |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Technol.) |
| Date | 2023-11-30 |
| Paper # | ED2023-16,CPM2023-58,LQE2023-56 |
| Volume (vol) | vol.123 |
| Number (no) | ED-288,CPM-289,LQE-290 |
| Page | pp.pp.11-14(ED), pp.11-14(CPM), pp.11-14(LQE), |
| #Pages | 4 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |