Presentation 2023-11-09
[Invited Talk] Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates
Jun Suda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recent progress of GaN vertical power devices which fabricated on n-type GaN bulk substates. Fundamental properties of GaN (impact ionization and Zener band-to-band tunneling), progress of GaN bulk substrate developments, device fabrication processes such as epitaxial growth, ion implantation and MOS interface are reviewed. Future challenges toward commercialization of GaN vertical devices are also discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / vertical power devices / MOS / ion implantation / electrical properties
Paper # SDM2023-63
Date of Issue 2023-11-02 (SDM)

Conference Information
Committee SDM
Conference Date 2023/11/9(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English) Process, Device, Circuit simulation, etc.
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami(Rapidus)
Secretary Tatsuya Usami(Tohoku Univ.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates
Sub Title (in English)
Keyword(1) GaN
Keyword(2) vertical power devices
Keyword(3) MOS
Keyword(4) ion implantation
Keyword(5) electrical properties
1st Author's Name Jun Suda
1st Author's Affiliation Nagoya University(Nagoya Univ.)
Date 2023-11-09
Paper # SDM2023-63
Volume (vol) vol.123
Number (no) SDM-250
Page pp.pp.7-7(SDM),
#Pages 1
Date of Issue 2023-11-02 (SDM)