| Presentation | 2023-11-30 Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi, Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura, Hiroshi Ohta, Tomoyoshi Mishima, Kenji Shiojima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics of the Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts as a simplified structure of a junction barrier Schottky diode. A 25-times larger photocurrent-signal with a lock-in phase shift of 180° was detected on the electrode periphery than that in the electrode center in the SIPM results. Combining with photocurrent-spectra measurements, a lateral distribution of the Ni/p-GaN interface was responsible for the large signal. We could detect the individual current transport mechanism on the electrode peripheries by two-dimensional characterization using the SIPM method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Schottky contact / scanning internal photoemission microscopy |
| Paper # | ED2023-18,CPM2023-60,LQE2023-58 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / ED / CPM |
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| Conference Date | 2023/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
| Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Schottky contact |
| Keyword(3) | scanning internal photoemission microscopy |
| 1st Author's Name | Haruto Yoshimura |
| 1st Author's Affiliation | Fukui University(Fukui univ.) |
| 2nd Author's Name | Hiroki Imabayashi |
| 2nd Author's Affiliation | Fukui University(Fukui univ.) |
| 3rd Author's Name | Fumimasa Horikiri |
| 3rd Author's Affiliation | Sumitomo Chemical Company(Sumitomo Chem.) |
| 4th Author's Name | Yoshinobu Narita |
| 4th Author's Affiliation | Sumitomo Chemical Company(Sumitomo Chem.) |
| 5th Author's Name | Hajime Fujikura |
| 5th Author's Affiliation | Sumitomo Chemical Company(Sumitomo Chem.) |
| 6th Author's Name | Hiroshi Ohta |
| 6th Author's Affiliation | Hosei university(Hosei Univ.) |
| 7th Author's Name | Tomoyoshi Mishima |
| 7th Author's Affiliation | Hosei university(Hosei Univ.) |
| 8th Author's Name | Kenji Shiojima |
| 8th Author's Affiliation | Fukui University(Fukui univ.) |
| Date | 2023-11-30 |
| Paper # | ED2023-18,CPM2023-60,LQE2023-58 |
| Volume (vol) | vol.123 |
| Number (no) | ED-288,CPM-289,LQE-290 |
| Page | pp.pp.21-24(ED), pp.21-24(CPM), pp.21-24(LQE), |
| #Pages | 4 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |