| Presentation | 2023-11-10 [Invited Talk] DFT study on electronic structure and carrier-transport property of SiC-MOS interface. Tomoya Ono, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Density functional theory calculations for investigation of electronic structure and charrier scattering property of the 4H-SiC(0001)/SiO2 interface with atomic scale steps are performed. We find that the bonding structure with SiO2 affects the electronic structure of the 4H-SiC(0001)/SiO2 interface. Carrier scattering property calculation reveals that two conduction channels contribute the electron conduction at the interface. The behavior of the electrons flowing inside the substrate is insensitive to the existence of the step edges while that of the electrons flowing the channel immediately below the interface is affected at the step edge, resulting in the reduction of the transmission. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DFT calculation / SiC MOS / Scattering property |
| Paper # | SDM2023-73 |
| Date of Issue | 2023-11-02 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2023/11/9(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(Rapidus) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] DFT study on electronic structure and carrier-transport property of SiC-MOS interface. |
| Sub Title (in English) | |
| Keyword(1) | DFT calculation |
| Keyword(2) | SiC MOS |
| Keyword(3) | Scattering property |
| 1st Author's Name | Tomoya Ono |
| 1st Author's Affiliation | Kobe University(Kobe Univ.) |
| Date | 2023-11-10 |
| Paper # | SDM2023-73 |
| Volume (vol) | vol.123 |
| Number (no) | SDM-250 |
| Page | pp.pp.47-50(SDM), |
| #Pages | 4 |
| Date of Issue | 2023-11-02 (SDM) |