Presentation 2023-11-30
Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system
Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT) systems in addition to solar cells. In this study, we grew the GaInN-based PV cell structure for optical wireless power transmission systems on free-standing (FS) GaN substrate to improve the quality of epitaxial film for improvement of the power conversion efficiency (PCE) and conducted the device fabrication and characterizations. The dislocations and pits were decreased and crystal quality was improved, leading to reduction of recombination current for the diode characteristics without light illumination for PV on FS-GaN substrate, compared to PV on the sapphire substrate. Because of the improvement of surface flatness, reflection from surface increased, but it was suppressed with the use of TMAH solution treatment and ALD-Al2O3 as an anti-reflection (AR) film, resulting in high EQE of 90 %. In the PV characteristics, thanks to improvement of crystal quality by using FS-GaN, and high EQE by using TMAH solution treatment and AR film, the highest power conversion efficiency (PCE) of 43.7 % was achievded at a monochromatic light illumination with 388 nm in wavelength and 5 mW/cm2 in optical power density for PV device on FS-GaN substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaInN-MQW / MOCVD / PV / FS-GaN substrate / OWPT system / AR film / TMAH
Paper # ED2023-23,CPM2023-65,LQE2023-63
Date of Issue 2023-11-23 (ED, CPM, LQE)

Conference Information
Committee LQE / ED / CPM
Conference Date 2023/11/30(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.)
Vice Chair Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.)
Secretary Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.)
Assistant Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system
Sub Title (in English)
Keyword(1) GaInN-MQW
Keyword(2) MOCVD
Keyword(3) PV
Keyword(4) FS-GaN substrate
Keyword(5) OWPT system
Keyword(6) AR film
Keyword(7) TMAH
1st Author's Name Takahiro Fujiawa
1st Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
2nd Author's Name Nan Hu
2nd Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
3rd Author's Name Tomoki Kojima
3rd Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
4th Author's Name Takashi Egawa
4th Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
5th Author's Name Makoto Miyoshi
5th Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
Date 2023-11-30
Paper # ED2023-23,CPM2023-65,LQE2023-63
Volume (vol) vol.123
Number (no) ED-288,CPM-289,LQE-290
Page pp.pp.44-47(ED), pp.44-47(CPM), pp.44-47(LQE),
#Pages 4
Date of Issue 2023-11-23 (ED, CPM, LQE)