Presentation | 2023-11-30 Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT) systems in addition to solar cells. In this study, we grew the GaInN-based PV cell structure for optical wireless power transmission systems on free-standing (FS) GaN substrate to improve the quality of epitaxial film for improvement of the power conversion efficiency (PCE) and conducted the device fabrication and characterizations. The dislocations and pits were decreased and crystal quality was improved, leading to reduction of recombination current for the diode characteristics without light illumination for PV on FS-GaN substrate, compared to PV on the sapphire substrate. Because of the improvement of surface flatness, reflection from surface increased, but it was suppressed with the use of TMAH solution treatment and ALD-Al2O3 as an anti-reflection (AR) film, resulting in high EQE of 90 %. In the PV characteristics, thanks to improvement of crystal quality by using FS-GaN, and high EQE by using TMAH solution treatment and AR film, the highest power conversion efficiency (PCE) of 43.7 % was achievded at a monochromatic light illumination with 388 nm in wavelength and 5 mW/cm2 in optical power density for PV device on FS-GaN substrate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaInN-MQW / MOCVD / PV / FS-GaN substrate / OWPT system / AR film / TMAH |
Paper # | ED2023-23,CPM2023-65,LQE2023-63 |
Date of Issue | 2023-11-23 (ED, CPM, LQE) |
Conference Information | |
Committee | LQE / ED / CPM |
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Conference Date | 2023/11/30(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
Paper Information | |
Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system |
Sub Title (in English) | |
Keyword(1) | GaInN-MQW |
Keyword(2) | MOCVD |
Keyword(3) | PV |
Keyword(4) | FS-GaN substrate |
Keyword(5) | OWPT system |
Keyword(6) | AR film |
Keyword(7) | TMAH |
1st Author's Name | Takahiro Fujiawa |
1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
2nd Author's Name | Nan Hu |
2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
3rd Author's Name | Tomoki Kojima |
3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
4th Author's Name | Takashi Egawa |
4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
5th Author's Name | Makoto Miyoshi |
5th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
Date | 2023-11-30 |
Paper # | ED2023-23,CPM2023-65,LQE2023-63 |
Volume (vol) | vol.123 |
Number (no) | ED-288,CPM-289,LQE-290 |
Page | pp.pp.44-47(ED), pp.44-47(CPM), pp.44-47(LQE), |
#Pages | 4 |
Date of Issue | 2023-11-23 (ED, CPM, LQE) |