| Presentation | 2023-10-13 [Invited Talk] Defect Reduction in UV Nanoimprint Lithography Toshiki ITO, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Field-by-field type UV nanoimprint lithography equipped with on-demand inkjet dispense system has been developed, which was named Jet and Flash Imprint Lithography (JFIL). In conventional JFIL condition, the inkjet drops of the resist are still remained independent to each other when imprinting a mold, so that the ambient gas is trapped among the resist drops, the substrate and the mold to generate bubbles. It takes time for the trapped bubbles to disappear and some bubbles sometimes remain in the cured resist film to cause open defect. Waiting time for gas disappearance results in low throughput and the remained bubbles causes defect problem in JFIL. In case that carbon dioxide ambient is applied in JFIL, it was theoretically and experimentally demonstrated that the trapped carbon dioxide gas dissolved rapidly into organic liquid or organic solid layer in imprint stack. The trapped carbon dioxide gas bubble disappeared more rapidly than that of helium gas, which resulted in higher throughput and fewer defect number. Fluid control technology of drop liquid was developed based on fluid mechanics, interface science and liquid property design to have drops of imprint resist to combine prior to imprinting, which was named combined drop JFIL (CD-JFIL). In CD-JFIL, trapped gas volume is minimized to reduce imprint time and bubble defects. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor / Lithography / Nanoimprint / Inkjet / Resist / Carbon dioxide / Defect |
| Paper # | SDM2023-54 |
| Date of Issue | 2023-10-06 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2023/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(Rapidus) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Defect Reduction in UV Nanoimprint Lithography |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor |
| Keyword(2) | Lithography |
| Keyword(3) | Nanoimprint |
| Keyword(4) | Inkjet |
| Keyword(5) | Resist |
| Keyword(6) | Carbon dioxide |
| Keyword(7) | Defect |
| 1st Author's Name | Toshiki ITO |
| 1st Author's Affiliation | Canon Inc.(Canon) |
| Date | 2023-10-13 |
| Paper # | SDM2023-54 |
| Volume (vol) | vol.123 |
| Number (no) | SDM-211 |
| Page | pp.pp.1-6(SDM), |
| #Pages | 6 |
| Date of Issue | 2023-10-06 (SDM) |