| Presentation | 2023-10-13 A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure Jiaang Zhao, Shun-ichiro Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. However, in the conventional device structure, the n+- Si(100) substrate was used as the back gate electrode so that the gate leakage current was large, and the threshold voltage control was insufficient. In this study, the integration of OFETs and ReRAM utilizing nitrogen doped LaB6 / LaBxNy stacked structure was investigated. After the patterning of nitrogen-doped LaB6 bottom gate electrode, LaBxNy gate insulator and pentacene film were deposited followed by the Au source/drain electrode formation. The gate leakage current was reduced approximately one order of magnitude. The hole mobility was increased from 0.13 cm^2/(V?s) to 0.35 cm^2/(V?s). Furthermore, the subthreshold swing (SS) was decreased from 381 mV/dec. to 282 mV/dec., respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | organic field effect transistor / nitrogen-doped LaB6 / LaBxNy insulator / RF sputtering |
| Paper # | SDM2023-61 |
| Date of Issue | 2023-10-06 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2023/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(Rapidus) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure |
| Sub Title (in English) | |
| Keyword(1) | organic field effect transistor |
| Keyword(2) | nitrogen-doped LaB6 |
| Keyword(3) | LaBxNy insulator |
| Keyword(4) | RF sputtering |
| 1st Author's Name | Jiaang Zhao |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 2nd Author's Name | Shun-ichiro Ohmi |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2023-10-13 |
| Paper # | SDM2023-61 |
| Volume (vol) | vol.123 |
| Number (no) | SDM-211 |
| Page | pp.pp.46-49(SDM), |
| #Pages | 4 |
| Date of Issue | 2023-10-06 (SDM) |