| Presentation | 2023-10-13 [Invited Talk] Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers Kiyoteru Kobayashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-dimensional NAND-type flash memory and embedded nonvolatile memory. We have analyzed the conduction current flowing through silicon nitride-silicon dioxide stacked films under negative gate bias at high temperatures and have presented a method to estimate the energy depth of trap states for electrons in the silicon nitride film. The trap depth for electrons in the silicon nitride film used in this work was estimated to be 1.3 eV, which was deeper as compared to that for holes (~1.0 eV). Next, using the presented method, trap depths for electrons and holes in silicon nitride films with two different N/Si composition ratios were compared. Both trap states for electrons and holes were deeper in the silicon nitride film with the higher N/Si composition ratio. We have also proposed two methods to determine the charge centroid locations of electrons and holes trapped in MONOS devices. Using the proposed methods, it was shown that the charge centroid location of trapped holes was moved from the inside of the nitride film to the blocking oxide-silicon nitride interface. In addition, it was revealed that the charge centroid of electrons trapped in a 10-nm-thick nitride film was located near the middle of the nitride film. The proposed methods are useful for designing MONOS structures with robust reliability. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon nitride / nonvolatile memory / flash memory / charge trap center / charge centroid / trap |
| Paper # | SDM2023-56 |
| Date of Issue | 2023-10-06 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2023/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(Rapidus) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers |
| Sub Title (in English) | |
| Keyword(1) | silicon nitride |
| Keyword(2) | nonvolatile memory |
| Keyword(3) | flash memory |
| Keyword(4) | charge trap center |
| Keyword(5) | charge centroid |
| Keyword(6) | trap |
| 1st Author's Name | Kiyoteru Kobayashi |
| 1st Author's Affiliation | Tokai University(Tokai Univ.) |
| Date | 2023-10-13 |
| Paper # | SDM2023-56 |
| Volume (vol) | vol.123 |
| Number (no) | SDM-211 |
| Page | pp.pp.13-20(SDM), |
| #Pages | 8 |
| Date of Issue | 2023-10-06 (SDM) |