Presentation 2023-10-31
Characterization and Analysis of TiN Films on MgO Substrate to Clarify the Detection Mechanism of Superconducting Single-Photon Detectors
Tsubasa Ishimura, Hiroki Kutsuma, Taro Yamashita,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) To clarify the correlation between the crystallinity of the films and detector performance and to establish the guideline principles for improving the performance, we characterized TiN films with good lattice matching to the MgO(100) substrate. Compared with previous studies, TiN films with lattice constant closer to those of bulk TiN crystals and the MgO(100) substrate were obtained under conditions where the substrate was not heated. Also, critical temperature, resistivity, and penetration depth could be controlled in the range of 160 ~ 280 nm by the N2 flow ratio. The critical current density of the fabricated TiN wire was found to be 14 ~ 24% of the depairing current density. Finally, it was found that Ar ion beam irradiation can improve the penetration depth of TiN films and reduce the critical current density.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SSPD / penetration depth / current distribution
Paper # SCE2023-22
Date of Issue 2023-10-23 (SCE)

Conference Information
Committee SCE
Conference Date 2023/10/30(2days)
Place (in Japanese) (See Japanese page)
Place (in English) RIEC, Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Superconducting Electronics
Chair Shigehito Miki(NICT)
Vice Chair
Secretary (Kanazawa Inst. of Tech.)
Assistant Hiroyuki Akaike(Daido Univ.)

Paper Information
Registration To Technical Committee on Superconductive Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization and Analysis of TiN Films on MgO Substrate to Clarify the Detection Mechanism of Superconducting Single-Photon Detectors
Sub Title (in English)
Keyword(1) SSPD
Keyword(2) penetration depth
Keyword(3) current distribution
1st Author's Name Tsubasa Ishimura
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Hiroki Kutsuma
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
3rd Author's Name Taro Yamashita
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2023-10-31
Paper # SCE2023-22
Volume (vol) vol.123
Number (no) SCE-234
Page pp.pp.49-53(SCE),
#Pages 5
Date of Issue 2023-10-23 (SCE)