Presentation 2023-08-24
[Invited Talk] Growth and applications of nitride semiconductors on layered hexagonal boron nitride
Yasuyuki Kobayashi, Masanobu Hiroki, Kazuhide Kumakura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) layer grown on sapphire substrates with metalorganic vapor phase epitaxy (MOVPE) and that the h-BN layer enabled us to release the nitride semiconductors from the host sapphire substrates. Here we report on molecular beam epitaxy (MBE) growth of nitride semiconductors on h-BN layers with MBE.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) hexagonal boron nitride / nitride semiconductors / MOVPE / MBE
Paper # R2023-24,EMD2023-19,CPM2023-29,OPE2023-68,LQE2023-15
Date of Issue 2023-08-17 (R, EMD, CPM, OPE, LQE)

Conference Information
Committee LQE / OPE / CPM / EMD / R
Conference Date 2023/8/24(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Tohoku university
Topics (in Japanese) (See Japanese page)
Topics (in English) Photodetectors, Modulators, Optical Electrical device packaging and reliability
Chair Kosuke Nishimura(KDDI Research) / Taro Arakawa(Yokohama National Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Takahiro Ueno(Nippon Inst. of Tech.) / Yasushi Kadota(Ricoh)
Vice Chair Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / / Tomoaki Terasako(Ehime Univ.) / / Hiroyuki Okamura(Hiroshima Univ.)
Secretary Atsushi Yamaguchi(Fujitsu) / (Yokohama National Univ.) / Tomoaki Terasako(Kanto Gakuin Univ.) / (NTT) / Hiroyuki Okamura(Shinshu Univ.)
Assistant Keita Mochiduki(Yokohama National Univ.) / Takshi Fujisawa(Hokaido Univ.) / Hideyuki Nasu(Furukawa Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Naoki Fukuda(Teikyo Univ.) / Shinji Yokogawa(Univ. of Electro-Comm.) / Takahide Yoshikawa(Fujitsu Lab.) / Shuhei Ota(Kanagawa Univ.)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on OptoElectronics / Technical Committee on Component Parts and Materials / Technical Committee on Electromechanical Devices / Technical Committee on Reliability
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Growth and applications of nitride semiconductors on layered hexagonal boron nitride
Sub Title (in English)
Keyword(1) hexagonal boron nitride
Keyword(2) nitride semiconductors
Keyword(3) MOVPE
Keyword(4) MBE
1st Author's Name Yasuyuki Kobayashi
1st Author's Affiliation Hirosaki University(Hirosaki Univ.)
2nd Author's Name Masanobu Hiroki
2nd Author's Affiliation NTT Basic Research Laboratories(NTT Basic Research Lab.)
3rd Author's Name Kazuhide Kumakura
3rd Author's Affiliation NTT Basic Research Laboratories(NTT Basic Research Lab.)
Date 2023-08-24
Paper # R2023-24,EMD2023-19,CPM2023-29,OPE2023-68,LQE2023-15
Volume (vol) vol.123
Number (no) R-158,EMD-159,CPM-160,OPE-161,LQE-162
Page pp.pp.42-44(R), pp.42-44(EMD), pp.42-44(CPM), pp.42-44(OPE), pp.42-44(LQE),
#Pages 3
Date of Issue 2023-08-17 (R, EMD, CPM, OPE, LQE)