| Presentation | 2023-08-02 [Invited Talk] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2023-45,ICD2023-24 |
| Date of Issue | 2023-07-25 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
|---|---|
| Conference Date | 2023/8/1(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. Multimedia Education Bldg. 3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) / Makoto Ikeda(Univ. of Tokyo) / Masayuki Ikebe(Hokkaido Univ.) |
| Vice Chair | Tatsuya Usami(Rapidus) / Hayato Wakabayashi(Sony Semiconductor Solutions) / Takashi Komuro(Saitama Univ.) / Kazuhiro Shimonomura(Ritsmeikan Univ.) / Keiichiro Kagawa(Shizuoka Univ.) |
| Secretary | Tatsuya Usami(Tohoku Univ.) / Hayato Wakabayashi(Panasonic) / Takashi Komuro(Kioxia) / Kazuhiro Shimonomura(Shinshu Univ.) / Keiichiro Kagawa(Tokyo Inst. of Tech.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) / Ryo Shirai(Kyoto Univ.) / Jun Shiomi(Osaka Univ.) / Takeshi Kuboki(Sony Semiconductor Solutions) / Junichi Akita(Kanazawa Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Masaharu Kobayashi |
| 1st Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 2nd Author's Name | Kaito Hikake |
| 2nd Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 3rd Author's Name | Zhuo Li |
| 3rd Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 4th Author's Name | Junxiang Hao |
| 4th Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 5th Author's Name | Chitra Pandy |
| 5th Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 6th Author's Name | Takuya Saraya |
| 6th Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 7th Author's Name | Toshiro Hiramoto |
| 7th Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 8th Author's Name | Takanori Takahashi |
| 8th Author's Affiliation | NAIST(NAIST) |
| 9th Author's Name | Mutsunori Uenuma |
| 9th Author's Affiliation | NAIST(NAIST) |
| 10th Author's Name | Yukiharu Uraoka |
| 10th Author's Affiliation | NAIST(NAIST) |
| Date | 2023-08-02 |
| Paper # | SDM2023-45,ICD2023-24 |
| Volume (vol) | vol.123 |
| Number (no) | SDM-143,ICD-144 |
| Page | pp.pp.45-49(SDM), pp.45-49(ICD), |
| #Pages | 5 |
| Date of Issue | 2023-07-25 (SDM, ICD) |