| Presentation | 2023-08-01 Fabrication of SiC/AlN multilayer structure on 3? off-axis Si(110) substrate and graphene formation thereon Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have grown aluminum nitride (AlN) films on 3 ?off-axis Si(110) substrates by pulsed laser deposition (PLD) and formed SiC low-temperature buffer layers on the AlN layers by ultralow pressure chemical vapor deposition using monomethylsilane (MMS; CH3SiH3) to grow SiC films on the buffer layers by PLD. We optimized the substrate temperature and MMS pressure for formation of the buffer layers to improve the crystallinity and surface roughness of the SiC films. Furthermore, graphene was formed on the SiC films on the buffer layers formed under the optimized conditions by high- temperature annealing in vacuum. X-ray photoelectron spectroscopy and Raman spectroscopy were used to evaluate the crystallinity and determine the number of layers of graphene. Annealing at 1200 ?C for 30 min resulted in the formation of 4-5 layers of graphene. It was found that employing the SiC buffer layer formed under the optimized conditions increased the growth rate of graphene, which was much higher than those of graphene on Si(110) substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene / Silicon carbide / Aluminum nitride / Pulsed laser deposition / Heteroepitaxy |
| Paper # | CPM2023-19 |
| Date of Issue | 2023-07-24 (CPM) |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2023/7/31(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hideki Nakazawa(Hirosaki Univ.) |
| Vice Chair | Tomoaki Terasako(Ehime Univ.) |
| Secretary | Tomoaki Terasako(Shinshu Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of SiC/AlN multilayer structure on 3? off-axis Si(110) substrate and graphene formation thereon |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | Silicon carbide |
| Keyword(3) | Aluminum nitride |
| Keyword(4) | Pulsed laser deposition |
| Keyword(5) | Heteroepitaxy |
| 1st Author's Name | Ryosuke Saito |
| 1st Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 2nd Author's Name | Yuki Nara |
| 2nd Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 3rd Author's Name | Daiki Kasai |
| 3rd Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 4th Author's Name | Haruto Koriyama |
| 4th Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 5th Author's Name | Yoshiharu Enta |
| 5th Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 6th Author's Name | Hideki Nakazawa |
| 6th Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| Date | 2023-08-01 |
| Paper # | CPM2023-19 |
| Volume (vol) | vol.123 |
| Number (no) | CPM-142 |
| Page | pp.pp.29-32(CPM), |
| #Pages | 4 |
| Date of Issue | 2023-07-24 (CPM) |