| Presentation | 2023-04-11 [Invited Talk] Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa, Toru Nakura, Shunpei Yamazaki, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have achieved a small-area, low-power AI chip that enables inference corresponding to multiple neural networks using a three-dimensional stacked oxide semiconductor memory. This chip has two bank memories which are directly stacked on a flip-flop and an AI accelerator utilizing the feature that an oxide semiconductor FET can be embedded in Si CMOS BEOL. An average power of 25.2 μW was achieved by intermittent operation with two types of inference and power gating. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Oxide semiconductor / Machine learning / Memory |
| Paper # | ICD2023-10 |
| Date of Issue | 2023-04-03 (ICD) |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 2023/4/10(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Masafumi Takahashi(Kioxia) |
| Vice Chair | Makoto Ikeda(Univ. of Tokyo) |
| Secretary | Makoto Ikeda(TSMC) |
| Assistant | Yoshiaki Yoshihara(Kioxia) / Jun Shiomi(Osaka Univ.) / Takeshi Kuboki(Sony Semiconductor Solutions) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating |
| Sub Title (in English) | |
| Keyword(1) | Oxide semiconductor |
| Keyword(2) | Machine learning |
| Keyword(3) | Memory |
| 1st Author's Name | Yuto Yakubo |
| 1st Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 2nd Author's Name | Kazuma Furutani |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 3rd Author's Name | Kouhei Toyotaka |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 4th Author's Name | Haruki Katagiri |
| 4th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 5th Author's Name | Masashi Fujita |
| 5th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 6th Author's Name | Munehiro Kozuma |
| 6th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 7th Author's Name | Yoshinori Ando |
| 7th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 8th Author's Name | Yoshiyuki Kurokawa |
| 8th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| 9th Author's Name | Toru Nakura |
| 9th Author's Affiliation | Fukuoka University(Fukuoka Univ.) |
| 10th Author's Name | Shunpei Yamazaki |
| 10th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd.(SEL) |
| Date | 2023-04-11 |
| Paper # | ICD2023-10 |
| Volume (vol) | vol.123 |
| Number (no) | ICD-1 |
| Page | pp.pp.18-23(ICD), |
| #Pages | 6 |
| Date of Issue | 2023-04-03 (ICD) |