Presentation 2023-04-22
[Invited Talk] Metal induced lateral crystallization of amorphous Ge on insulating substrate
Isao Tsunoda, Kenichiro Takakura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated the low-temperature metal induced lateral crystallization of amorphous Ge on insulating substrate. Metal induced lateral crystallization is caused after catalytic metal atom diffusion into amorphous Ge. In order to enhance the metal induced lateral crystallization, we examined the Ge-Ge bond strength of amorphous Ge modulated by using electron irradiation and compressive residual stress in TEOS-SiO2. As a result, the Au induced lateral crystallization of amorphous Ge was significantly enhanced (~ 10 times). This study proposes a unique low temperature crystallization technique that introduces electron irradiation and residual stress on Au induced lateral crystallization.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Germanium / Solid phase crystallization / Metal induced lateral crystallization / Electron beam irradiation / Compressive stress stimulation
Paper # SDM2023-15,OME2023-15
Date of Issue 2023-04-14 (SDM, OME)

Conference Information
Committee SDM / OME
Conference Date 2023/4/21(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Okinawaken Seinen Kaikan
Topics (in Japanese) (See Japanese page)
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc.
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.) / Toshiki Yamada(NICT)
Vice Chair Tatsuya Usami(ASM Japan) / Eiji Itoh(Shinshu Univ.)
Secretary Tatsuya Usami(Tohoku Univ.) / Eiji Itoh(Panasonic)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) / Yoshiyuki Seike(Aichi Inst. of Tech.) / Akira Baba(Niigata Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Metal induced lateral crystallization of amorphous Ge on insulating substrate
Sub Title (in English)
Keyword(1) Germanium
Keyword(2) Solid phase crystallization
Keyword(3) Metal induced lateral crystallization
Keyword(4) Electron beam irradiation
Keyword(5) Compressive stress stimulation
1st Author's Name Isao Tsunoda
1st Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto College)
2nd Author's Name Kenichiro Takakura
2nd Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto College)
Date 2023-04-22
Paper # SDM2023-15,OME2023-15
Volume (vol) vol.123
Number (no) SDM-8,OME-9
Page pp.pp.55-58(SDM), pp.55-58(OME),
#Pages 4
Date of Issue 2023-04-14 (SDM, OME)