| Presentation | 2023-01-27 [Invited Talk] Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application Koji Matsunaga, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In recent years, High frequency GaN Transistor are used in many kinds of high frequency applications such as base-station, broadcasting transmitter, radar, and microwave wireless infrastructure. This means GaN transistor has the decided advantage of high voltage operation due to the progress of device processes. This paper describes the developed GaN transistors design consideration and power amplifier performances of microwave and millimeter-wave application. Furthermore, I anticipate the development of GaN transistor in the next-generation mobile wireless communication system, also known as B5G. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Power amplifire / GaN / microwave and millimeter-wave |
| Paper # | ED2022-95,MW2022-154 |
| Date of Issue | 2023-01-20 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
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| Conference Date | 2023/1/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Noriharu Suematsu(Tohoku Univ.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Vice Chair | Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Hideyuki Nakamizo(Mitsubishi Electric) / Seiya Sakai(Hokkaido Univ.) |
| Secretary | Tadashi Kawai(Univ. of Electro-Comm) / Kensuke Okubo(Toshiba) / Hideyuki Nakamizo(Saga Univ.) / Seiya Sakai(NTT) |
| Assistant | Naoki Hasegawa(Softbank) / Kosuke Katayama(NIT Tokuyama College) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application |
| Sub Title (in English) | |
| Keyword(1) | Power amplifire |
| Keyword(2) | GaN |
| Keyword(3) | microwave and millimeter-wave |
| 1st Author's Name | Koji Matsunaga |
| 1st Author's Affiliation | Shonan Institute of Technology(SIT) |
| Date | 2023-01-27 |
| Paper # | ED2022-95,MW2022-154 |
| Volume (vol) | vol.122 |
| Number (no) | ED-370,MW-371 |
| Page | pp.pp.44-49(ED), pp.44-49(MW), |
| #Pages | 6 |
| Date of Issue | 2023-01-20 (ED, MW) |