| Presentation | 2023-01-20 Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters Daisuke Arai, Aoi Oyane, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The behavior of SiC-MOSFETs was analyzed using semiconductor device simulation (TCAD) in a series LC resonant inverter operating at 13.56 MHz in which SiC-MOSFETs are used in a half-bridge configuration as the main switch. In this resonant inverter, turn-on for MOSFETs is ZVS while turn-off is not soft switching. There are few prior study which accurately estimated the contribution and increase/decrease of the electron current through the MOS channel and the contribution and increase/decrease of the hole current due to depletion layer expansion/contraction in the drift layer, especially during turn-on and turn-off transients. In the Spice model, parallel model of the ideal-switch and capacitances of Cds, Cgd, and Cgs is often used. The ideal-switch approximation means that when the gate bias crosses the threshold voltage, the MOS channel appears or disappears instantaneously, i.e., the electron current conducts or shuts down instantaneously. According to the approximation while the MOS is in blocking state, all current flows as charging and discharging currents in Cds, Cgd, and Cgs. However, actually, MOS channel appears and disappears gradually during turn-on or turn-off transient, and the electron current flowing through the channels also increases and decreases during the transient. The electron current does not disappear instantaneously and switch to a capacitive charging/discharging current at once. In this study, we analyzed the physical operation of MOSFETs driving a resonant inverter and validated the ideal-switch approximation in comparison with actual MOSFET operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 13.56MHz / Series LC resonant inverter / TCAD / ZVS / Transient analysis |
| Paper # | EE2022-54 |
| Date of Issue | 2023-01-12 (EE) |
| Conference Information | |
| Committee | EE |
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| Conference Date | 2023/1/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyushu Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yoshiyasu Nakashima(NXTEC) |
| Vice Chair | Hiroo Sekiya(Chiba Univ.) / Hiroaki Kusawake(JAXA) |
| Secretary | Hiroo Sekiya(Aichi Inst. of Tech.) / Hiroaki Kusawake(Nagasaki Inst. of Applied Science) |
| Assistant | Yuu Yonezawa(Nagoya Univ.) / Yudai Furukawa(Fukuoka Univ.) / Kazufumi Yuasa(NTT Facilities) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters |
| Sub Title (in English) | |
| Keyword(1) | 13.56MHz |
| Keyword(2) | Series LC resonant inverter |
| Keyword(3) | TCAD |
| Keyword(4) | ZVS |
| Keyword(5) | Transient analysis |
| 1st Author's Name | Daisuke Arai |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Aoi Oyane |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Yu Yonezawa |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Jun Imaoka |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Masayoshi Yamamoto |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2023-01-20 |
| Paper # | EE2022-54 |
| Volume (vol) | vol.122 |
| Number (no) | EE-343 |
| Page | pp.pp.157-162(EE), |
| #Pages | 6 |
| Date of Issue | 2023-01-12 (EE) |