| Presentation | 2023-01-27 Improvement of conductivity by post-annealing for ZnGa2O4:Cr3+ far-red phosphor thin films Haruki Taniguchi, Ryouta Hourai, Akihisa Ymasaki, Koutoku Ohmi, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | ZnGa2O4:Cr3+ thin films deposited by electron beam evaporation were subjected to rapid-thermal annealed (RTA) at 600°C for 7-8 minutes in N2+H2 atmosphere. The far-red emission due to the 3d-3d transition of Cr3+ centers activated in ZnGa2O4 were observed. From the current-voltage (I-V) measurements, ohmic conduction characteristics were also observed. The Hall measurements indicate the n-type conductivity. Furthermore, a current was slightly increased by the irradiation of ultraviolet ~ red LED light. It is considered that deep defects formed in the band may be the origin of the conductivity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Far-red phosphor / ZnGa2O4:Cr3+ / Polycrystalline / phosphor thin films / Photoconductivity |
| Paper # | EID2022-6 |
| Date of Issue | 2023-01-19 (EID) |
| Conference Information | |
| Committee | ITE-IDY / IEIJ-SSL / EID / SID-JC / IEE-EDD |
|---|---|
| Conference Date | 2023/1/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online (Zoom) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Takahiro Ishinabe(Tohoku Univ.) / / Masahiro Yamaguchi(Tokyo Inst. of Tech.) |
| Vice Chair | / / Masayuki Kanbara(NAIST) / Tomoyuki Ishihara(Japan Display) |
| Secretary | (Shizuoka Univ.) / (Tohoku Univ.) / Masayuki Kanbara / Tomoyuki Ishihara(NTT) / (SHARP) |
| Assistant | / / Hiroshi Tsuji(NHK) / Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Rumiko Yamaguchi(Akita Univ.) / Mitsuhiro Akimoto(Sanyo-Onoda City Univ) |
| Paper Information | |
| Registration To | Technical Group on Information Display / * / Technical Committee on Electronic Information Displays / Society for Informtion Display Japan Chapter / Technical Group on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of conductivity by post-annealing for ZnGa2O4:Cr3+ far-red phosphor thin films |
| Sub Title (in English) | |
| Keyword(1) | Far-red phosphor |
| Keyword(2) | ZnGa2O4:Cr3+ |
| Keyword(3) | Polycrystalline |
| Keyword(4) | phosphor thin films |
| Keyword(5) | Photoconductivity |
| 1st Author's Name | Haruki Taniguchi |
| 1st Author's Affiliation | Tottori University(Tottori Univ.) |
| 2nd Author's Name | Ryouta Hourai |
| 2nd Author's Affiliation | Tottori University(Tottori Univ.) |
| 3rd Author's Name | Akihisa Ymasaki |
| 3rd Author's Affiliation | Tottori University(Tottori Univ.) |
| 4th Author's Name | Koutoku Ohmi |
| 4th Author's Affiliation | Tottori University(Tottori Univ.) |
| Date | 2023-01-27 |
| Paper # | EID2022-6 |
| Volume (vol) | vol.122 |
| Number (no) | EID-366 |
| Page | pp.pp.9-12(EID), |
| #Pages | 4 |
| Date of Issue | 2023-01-19 (EID) |