Presentation 2022-12-09
Investigation for one-chip high functionality gate driver IC
Yusuke Ogushi, Satoshi Matsumoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal is to realize 3D power-SoC, which stacks driver circuit and control circuit for GaN power devices, and passive devices on one chip. One of the key issues to realize 3D power SoC is to develop fully integrated driver IC for GaN power devices without using discrete devices such as Schottky barrier diode. In this paper, we report the fully integrated gate driver IC with higher functionality.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 3D power SoC / GaN power device / Charge pump / Integration
Paper # EE2022-22,CPM2022-77,OME2022-35
Date of Issue 2022-12-02 (EE, CPM, OME)

Conference Information
Committee EE / OME / CPM
Conference Date 2022/12/9(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Yoshiyasu Nakashima(NXTEC) / Toshiki Yamada(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)
Vice Chair Hiroo Sekiya(Chiba Univ.) / Hiroaki Kusawake(JAXA) / Eiji Itoh(Shinshu Univ.) / Hideki Nakazawa(Hirosaki Univ.)
Secretary Hiroo Sekiya(Aichi Inst. of Tech.) / Hiroaki Kusawake(Nagasaki Inst. of Applied Science) / Eiji Itoh(Osaka Univ.) / Hideki Nakazawa(Tokyo Univ. of Agriculture and Tech.)
Assistant Yuu Yonezawa(Nagoya Univ.) / Yudai Furukawa(Fukuoka Univ.) / Kazufumi Yuasa(NTT Facilities) / Yoshiyuki Seike(Aichi Inst. of Tech.) / Akira Baba(Niigata Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.)

Paper Information
Registration To Technical Committee on Energy Engineering in Electronics and Communications / Technical Committee on Organic Molecular Electronics / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation for one-chip high functionality gate driver IC
Sub Title (in English)
Keyword(1) 3D power SoC
Keyword(2) GaN power device
Keyword(3) Charge pump
Keyword(4) Integration
1st Author's Name Yusuke Ogushi
1st Author's Affiliation Kyushu Institute of Technology(KIT)
2nd Author's Name Satoshi Matsumoto
2nd Author's Affiliation Kyushu Institute of Technology(KIT)
Date 2022-12-09
Paper # EE2022-22,CPM2022-77,OME2022-35
Volume (vol) vol.122
Number (no) EE-299,CPM-300,OME-301
Page pp.pp.18-23(EE), pp.18-23(CPM), pp.18-23(OME),
#Pages 6
Date of Issue 2022-12-02 (EE, CPM, OME)