| Presentation | 2022-12-19 [Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with THz wave band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapid growth of mobile traffics. We report high-yield fabrication process of InP-based high mobility transistors (InP-HEMTs) and Tera-Hertz monolithic ICs (THz-ICs) with 300-GHz-operation which is one of the candidate frequency for B5G/6G network systems. We also introduce InP-based THz-ICs such as 300-GHz power amplifiers and mixers and indicate that InP-based devices are an applicable candidate for B5G/6G. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Beyond 5G (B5G) / 6G / Tera-Hertz ICs (THz-ICs) / Indium phosphide (InP) / High electron mobility transistors (HEMTs) / Backside process / 300-GHz band |
| Paper # | ED2022-76,MWPTHz2022-47 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |
| Conference Information | |
| Committee | ED / MWPTHz |
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| Conference Date | 2022/12/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Atsushi Kanno(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Masayuki Fujita(Osaka Univ.) / Kensuke Ikeda(CRIEPI) |
| Secretary | Seiya Sakai(Saga Univ.) / Masayuki Fujita(NTT) / Kensuke Ikeda(NICT) |
| Assistant | Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Li Yi(Osaka Univ.) / Akira Satou(Tohoku Univ.) / Safumi Suzuki(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwave Photonics and Terahertz Photonic-Electronic Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with THz wave band |
| Sub Title (in English) | |
| Keyword(1) | Beyond 5G (B5G) / 6G |
| Keyword(2) | Tera-Hertz ICs (THz-ICs) |
| Keyword(3) | Indium phosphide (InP) |
| Keyword(4) | High electron mobility transistors (HEMTs) |
| Keyword(5) | Backside process |
| Keyword(6) | 300-GHz band |
| 1st Author's Name | Takuya Tsutsumi |
| 1st Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 2nd Author's Name | Hiroshi Hamada |
| 2nd Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 3rd Author's Name | Teruo Jyo |
| 3rd Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 4th Author's Name | Hiroki Sugiyama |
| 4th Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 5th Author's Name | Taro Sasaki |
| 5th Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 6th Author's Name | Hiroyuki Takahashi |
| 6th Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| 7th Author's Name | Fumito Nakajima |
| 7th Author's Affiliation | Nippon Telegraph and Telephone Corporation(NTT) |
| Date | 2022-12-19 |
| Paper # | ED2022-76,MWPTHz2022-47 |
| Volume (vol) | vol.122 |
| Number (no) | ED-319,MWPTHz-320 |
| Page | pp.pp.23-27(ED), pp.23-27(MWPTHz), |
| #Pages | 5 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |