| Presentation | 2022-12-20 Carrier transport properties and bandgap estimation on GaN:Eu using laser terahertz emission microscopy Fumiazku Murakami, Atsushi Takeo, Abdul Mannan, Yasufumi Fujiwara, Masayoshi Tonouchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN:Eu, gallium nitride (GaN) doped with europium, has attracted much attention as a material for GaN-based red light-emitting diode (LED). Although improvement of LED performance using GaN:Eu/GaN superlattice structure has been reported, the mechanism of the enhancement has not been clarified. In this study, we found that the bandgap of GaN:Eu is smaller than that of undoped GaN using terahertz emission spectroscopy. Furthermore, we revealed that the carrier mobility in the superlattice is smaller than that in the GaN:Eu monolayer, suggesting a new model that the carrier confinement effect due to the bandgap difference between GaN:Eu and GaN in the superlattice is responsible for the improvement of LED performance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | THz emission spectroscopy / laser THz emission microscopy / ultrafast carrier dynamics / GaN:Eu / red-LED |
| Paper # | ED2022-82,MWPTHz2022-53 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |
| Conference Information | |
| Committee | ED / MWPTHz |
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| Conference Date | 2022/12/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Atsushi Kanno(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Masayuki Fujita(Osaka Univ.) / Kensuke Ikeda(CRIEPI) |
| Secretary | Seiya Sakai(Saga Univ.) / Masayuki Fujita(NTT) / Kensuke Ikeda(NICT) |
| Assistant | Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Li Yi(Osaka Univ.) / Akira Satou(Tohoku Univ.) / Safumi Suzuki(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwave Photonics and Terahertz Photonic-Electronic Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Carrier transport properties and bandgap estimation on GaN:Eu using laser terahertz emission microscopy |
| Sub Title (in English) | |
| Keyword(1) | THz emission spectroscopy |
| Keyword(2) | laser THz emission microscopy |
| Keyword(3) | ultrafast carrier dynamics |
| Keyword(4) | GaN:Eu |
| Keyword(5) | red-LED |
| 1st Author's Name | Fumiazku Murakami |
| 1st Author's Affiliation | Institute of Laser Engineering, Osaka University(ILE, Osaka Univ.) |
| 2nd Author's Name | Atsushi Takeo |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University(GSE, Osaka Univ.) |
| 3rd Author's Name | Abdul Mannan |
| 3rd Author's Affiliation | The University of Manchester(The University of Manchester) |
| 4th Author's Name | Yasufumi Fujiwara |
| 4th Author's Affiliation | Graduate School of Engineering, Osaka University(GSE, Osaka Univ.) |
| 5th Author's Name | Masayoshi Tonouchi |
| 5th Author's Affiliation | Institute of Laser Engineering, Osaka University(ILE, Osaka Univ.) |
| Date | 2022-12-20 |
| Paper # | ED2022-82,MWPTHz2022-53 |
| Volume (vol) | vol.122 |
| Number (no) | ED-319,MWPTHz-320 |
| Page | pp.pp.52-57(ED), pp.52-57(MWPTHz), |
| #Pages | 6 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |