| Presentation | 2022-12-20 High-power resonant-tunneling-diode terahertz oscillator with thick InP conduction layer for heat dissipation and low conduction loss Hiroki Tanaka, Hidenari Fujikata, Feifan Han, Akira Ishikawa, Safumi Suzuki, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Resonant tunneling diode (RTD) structure is one of the candidates for the terahertz (THz) sources. However, the output power is small, because a small RTD area must be employed due to heat destruction. In this study, the low-thermal conductive n+-InGaAs layer under the RTD layer, which disturbed heat dissipation to the substrate, was replaced by a high-thermal conductive n+-InP layer. Using this RTD structure, we fabricated THz oscillators with rectangular cavity resonator and large-area RTD. As a result, a high output power of 0.84 mW was achieved at 0.61 THz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Terahertz (THz) Oscillator / Resonant tunneling diode (RTD) |
| Paper # | ED2022-80,MWPTHz2022-51 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |
| Conference Information | |
| Committee | ED / MWPTHz |
|---|---|
| Conference Date | 2022/12/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Atsushi Kanno(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Masayuki Fujita(Osaka Univ.) / Kensuke Ikeda(CRIEPI) |
| Secretary | Seiya Sakai(Saga Univ.) / Masayuki Fujita(NTT) / Kensuke Ikeda(NICT) |
| Assistant | Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Li Yi(Osaka Univ.) / Akira Satou(Tohoku Univ.) / Safumi Suzuki(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwave Photonics and Terahertz Photonic-Electronic Technologies |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-power resonant-tunneling-diode terahertz oscillator with thick InP conduction layer for heat dissipation and low conduction loss |
| Sub Title (in English) | |
| Keyword(1) | Terahertz (THz) Oscillator |
| Keyword(2) | Resonant tunneling diode (RTD) |
| 1st Author's Name | Hiroki Tanaka |
| 1st Author's Affiliation | Tokyo Institute of Technology(Titech) |
| 2nd Author's Name | Hidenari Fujikata |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Titech) |
| 3rd Author's Name | Feifan Han |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Titech) |
| 4th Author's Name | Akira Ishikawa |
| 4th Author's Affiliation | Tokyo Institute of Technology(Titech) |
| 5th Author's Name | Safumi Suzuki |
| 5th Author's Affiliation | Tokyo Institute of Technology(Titech) |
| Date | 2022-12-20 |
| Paper # | ED2022-80,MWPTHz2022-51 |
| Volume (vol) | vol.122 |
| Number (no) | ED-319,MWPTHz-320 |
| Page | pp.pp.42-45(ED), pp.42-45(MWPTHz), |
| #Pages | 4 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |