Presentation 2022-12-19
Admittance spectroscopy of triple-barrier resonant tunnel diodes for extraction of quantum transport parameters.
Takeshi Makino, Michihiko Suhara, Kiyoto Asakawa, Issei Watanabe, Koichi Akahane,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Triple-barrier resonant tunneling diodes (TBRTDs) consisting of InGaAs/InAs/InAlAs heterostructures fabricated by low-temperature MBE growth on semi-insulating InP substrates were fabricated and their S-parameters up to 67 GHz were measured at room temperature. In particular, the negative differential conductance (NDC) due to the triple barrier structure could be measured without unwanted self oscillations. Admittance data of TBRTDs were deembedded by getting rid of parasitic components with help of electromagnetic simulations for CAD model of particular fabricated device structures. Results of admittance spectroscopy show that it is essential to take into account non-equilibrium electron relaxation and tunneling transport phenomena due to the interaction between the reservoir system and the resonant tunneling system in order to describe the frequency characteristics of TBRTDs. Quantum transport parameters were defined as a quantitative expression of these phenomena and their bias dependence was extracted. In the TBRTDs fabricated in this study, the quantum transport parameters were found to be on the order of approximately picoseconds. By extrapolation of the obtained theoretical admittances, the frequency characteristics of NDCs in the 300 GHz band were predicted.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) triple-barrier resonant tunneling diode / quamtum transport parameters / admittance spectroscopy
Paper # ED2022-75,MWPTHz2022-46
Date of Issue 2022-12-12 (ED, MWPTHz)

Conference Information
Committee ED / MWPTHz
Conference Date 2022/12/19(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroki Fujishiro(Tokyo Univ. of Science) / Atsushi Kanno(NICT)
Vice Chair Seiya Sakai(Hokkaido Univ.) / Masayuki Fujita(Osaka Univ.) / Kensuke Ikeda(CRIEPI)
Secretary Seiya Sakai(Saga Univ.) / Masayuki Fujita(NTT) / Kensuke Ikeda(NICT)
Assistant Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Li Yi(Osaka Univ.) / Akira Satou(Tohoku Univ.) / Safumi Suzuki(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Electron Devices / Technical Committee on Microwave Photonics and Terahertz Photonic-Electronic Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Admittance spectroscopy of triple-barrier resonant tunnel diodes for extraction of quantum transport parameters.
Sub Title (in English)
Keyword(1) triple-barrier resonant tunneling diode
Keyword(2) quamtum transport parameters
Keyword(3) admittance spectroscopy
1st Author's Name Takeshi Makino
1st Author's Affiliation Tokyo Metropolitan University(TMU)
2nd Author's Name Michihiko Suhara
2nd Author's Affiliation Tokyo Metropolitan University(TMU)
3rd Author's Name Kiyoto Asakawa
3rd Author's Affiliation Tokyo Metropolitan College of Industrial Technology(TMCIT)
4th Author's Name Issei Watanabe
4th Author's Affiliation National Institute of Information and Communications Technology(NICT)
5th Author's Name Koichi Akahane
5th Author's Affiliation National Institute of Information and Communications Technology(NICT)
Date 2022-12-19
Paper # ED2022-75,MWPTHz2022-46
Volume (vol) vol.122
Number (no) ED-319,MWPTHz-320
Page pp.pp.19-22(ED), pp.19-22(MWPTHz),
#Pages 4
Date of Issue 2022-12-12 (ED, MWPTHz)