| Presentation | 2022-11-24 Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realization of GaN-HBTs, there are several issues such as high offset voltages caused by the high resistance of p-type base layers. In this study, we investigated a p-GaInN base layer, which is expected to have lower resistivity than the p-GaN base layer, and a quaternary AlGaInN emitter layer which allows for the design of energy band gaps with less strains realizing low offset voltages in GaN HBTs. The electrical properties and surface morphologies of p-GaInN grown at 800°C to 840°C by MOCVD were investigated, and p-GaInN with an InN mole fraction of 4% or less was considered promising as a base layer. Nearly lattice-matched quaternary AlGaInN emitter layers were designed and grown by varying InN mole fractions at a constant AlN/GaN mole ratio, so as to satisfy an energy band offset and a surface flatness at the same time. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HBT / p-GaInN / AlGaInN / MOCVD |
| Paper # | ED2022-36,CPM2022-61,LQE2022-69 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / ED / LQE |
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| Conference Date | 2022/11/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
| Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs |
| Sub Title (in English) | |
| Keyword(1) | HBT |
| Keyword(2) | p-GaInN |
| Keyword(3) | AlGaInN |
| Keyword(4) | MOCVD |
| 1st Author's Name | Yusuke Iida |
| 1st Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 2nd Author's Name | Akira Mase |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 3rd Author's Name | Masaya Takimoto |
| 3rd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 4th Author's Name | Yutaka Nikai |
| 4th Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 5th Author's Name | Takashi Egawa |
| 5th Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 6th Author's Name | Makoto Miyoshi |
| 6th Author's Affiliation | Nagoya Institute of Technology(NITech) |
| Date | 2022-11-24 |
| Paper # | ED2022-36,CPM2022-61,LQE2022-69 |
| Volume (vol) | vol.122 |
| Number (no) | ED-271,CPM-272,LQE-273 |
| Page | pp.pp.57-60(ED), pp.57-60(CPM), pp.57-60(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |