Presentation | 2022-11-24 AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | ED2022-38,CPM2022-63,LQE2022-71 |
Date of Issue | 2022-11-17 (ED, CPM, LQE) |
Conference Information | |
Committee | CPM / ED / LQE |
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Conference Date | 2022/11/24(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
Paper Information | |
Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Takaya Koike |
1st Author's Affiliation | Nagoya Institute of Technology(NIT) |
2nd Author's Name | Koki Hayashi |
2nd Author's Affiliation | Nagoya Institute of Technology(NIT) |
3rd Author's Name | Ryosuke Hayafuji |
3rd Author's Affiliation | Nagoya Institute of Technology(NIT) |
4th Author's Name | Toshiharu Kubo |
4th Author's Affiliation | Nagoya Institute of Technology(NIT) |
5th Author's Name | Takashi Egawa |
5th Author's Affiliation | Nagoya Institute of Technology(NIT) |
Date | 2022-11-24 |
Paper # | ED2022-38,CPM2022-63,LQE2022-71 |
Volume (vol) | vol.122 |
Number (no) | ED-271,CPM-272,LQE-273 |
Page | pp.pp.65-68(ED), pp.65-68(CPM), pp.65-68(LQE), |
#Pages | 4 |
Date of Issue | 2022-11-17 (ED, CPM, LQE) |