| Presentation | 2022-11-24 Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs Keitaro Toda, Toshiharu Kubo, Takashi Egawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Degradation of electrical characteristics due to etching damage during recess structure formation has been an issue for normally-off type devices with a recess structure using ALD-SiO2/Al2O3 bilayer insulating film /AlGaN/GaN MIS-HEMTs. In order to improve the I/S interface after etching, we fabricated MIS-HEMTs with HCl and annealing treatments and evaluated the electrical properties. We confirmed that the RMS of the etched surface decreased from 0.65 nm to 0.42 nm by combining HCl treatment and 500℃ annealing. Furthermore, Vth shifted to the positive side from 2.68 V to 3.24 V, and ⊿Vth decreased by 1.1 V. We confirmed that the interface state at 0.7 eV below the conduction band minimum decreased by half from 2×1013 cm-2eV-1 to 7×1012 cm-2eV-1. We found that the surface treatment by HCl and annealing treatment is effective for the etching surface, and it is possible to fabricate a device that suppresses etching damage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / HEMT / ALD / Al2O3 / SiO2 |
| Paper # | ED2022-37,CPM2022-62,LQE2022-70 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / ED / LQE |
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| Conference Date | 2022/11/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
| Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | HEMT |
| Keyword(4) | ALD |
| Keyword(5) | Al2O3 |
| Keyword(6) | SiO2 |
| 1st Author's Name | Keitaro Toda |
| 1st Author's Affiliation | Nagoya Insititute of technology(NITech) |
| 2nd Author's Name | Toshiharu Kubo |
| 2nd Author's Affiliation | Nagoya Insititute of technology(NITech) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Insititute of technology(NITech) |
| Date | 2022-11-24 |
| Paper # | ED2022-37,CPM2022-62,LQE2022-70 |
| Volume (vol) | vol.122 |
| Number (no) | ED-271,CPM-272,LQE-273 |
| Page | pp.pp.61-64(ED), pp.61-64(CPM), pp.61-64(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |