| Presentation | 2022-11-24 Low-resistivity Al-doped ZnO transparent conductive films deposited by sol-gel method Koji Abe, Tasuku Kubota, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO thin films deposited by sol-gel method is relatively high, regardless of impurity doping. In this study, low-resistivity Al-doped ZnO thin films (AZO) were deposited on glass substrates with Zn layers by using sol-gel method. During annealing in Ar and H2 mixture at 520 ?C, the underlying Zn layer reacted with oxygen in the sol-gel deposited film. The AZO films after annealing were transparent. Hall mobility and carrier concentration were increased by using the glass substrates with Zn layers. The lowest resistivity obtained in this study was $1.4×10^−3$ $Omega$cm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | zinc oxide / transparent conductive oxide / sol-gel deposition |
| Paper # | ED2022-30,CPM2022-55,LQE2022-63 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / ED / LQE |
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| Conference Date | 2022/11/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
| Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-resistivity Al-doped ZnO transparent conductive films deposited by sol-gel method |
| Sub Title (in English) | |
| Keyword(1) | zinc oxide |
| Keyword(2) | transparent conductive oxide |
| Keyword(3) | sol-gel deposition |
| 1st Author's Name | Koji Abe |
| 1st Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 2nd Author's Name | Tasuku Kubota |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| Date | 2022-11-24 |
| Paper # | ED2022-30,CPM2022-55,LQE2022-63 |
| Volume (vol) | vol.122 |
| Number (no) | ED-271,CPM-272,LQE-273 |
| Page | pp.pp.33-36(ED), pp.33-36(CPM), pp.33-36(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |