| Presentation | 2022-11-24 Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement Taiki Nishida, Toshiyuki Oishi, Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | One issue in improving amplifier performance using GaN is evaluating the characteristics of traps. In this study, we evaluated the Fe-induced trap using a low-frequency$Y$parameter which is consistent with the circuit design. We compared the frequency characteristics of low-frequency $Y_{22}$ signals using GaN HEMTs with different Fe concentrations in the GaN layers. As a result, it was confirmed that only the peak in the low-frequency region changed depending on Fe concentration and that Fe trap has been observed in the imaginary part of low-frequency $Y_{22}$. Furthermore, we measured the dependence on the drain voltage under ON-state, and the peak frequency (time constant) of the traps shifted to a high-frequency region as the drain voltage increased, but the shifting amount was independent of Fe concentration. On the other hand, the drain voltage dependence of the amplitude of the trap peaks had a maximum value near the knee voltage and was larger in the GaN HEMT with higher Fe concentration. Therefore, it is considered that the linearity may be degraded when the output signal through near the knee voltage. In addition, the amplitude of the trap peaks is considered to increase in the case of a higher Fe concentration because of the narrowing of the depletion layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / low-frequency Y parameter / Fe-induced trap / knee voltage |
| Paper # | ED2022-34,CPM2022-59,LQE2022-67 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / ED / LQE |
|---|---|
| Conference Date | 2022/11/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
| Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | low-frequency Y parameter |
| Keyword(3) | Fe-induced trap |
| Keyword(4) | knee voltage |
| 1st Author's Name | Taiki Nishida |
| 1st Author's Affiliation | Saga University(Saga Univ.) |
| 2nd Author's Name | Toshiyuki Oishi |
| 2nd Author's Affiliation | Saga University(Saga Univ.) |
| 3rd Author's Name | Tomohiro Otsuka |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Elec. Corp.) |
| 4th Author's Name | Yutaro Yamaguchi |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Elec. Corp.) |
| 5th Author's Name | Shintaro Shinjo |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Elec. Corp.) |
| 6th Author's Name | Koji Yamanaka |
| 6th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Elec. Corp.) |
| Date | 2022-11-24 |
| Paper # | ED2022-34,CPM2022-59,LQE2022-67 |
| Volume (vol) | vol.122 |
| Number (no) | ED-271,CPM-272,LQE-273 |
| Page | pp.pp.49-52(ED), pp.49-52(CPM), pp.49-52(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |