Presentation | 2022-11-25 [Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We believe that an accurate estimation of the internal quantum efficiency (IQE) will lead to a comprehensive understanding of the carrier dynamics, and have proposed a simultaneous photoacoustic (PA) and photoluminescence (PL) measurements method to estimate the absolute value of IQE from experiments by measuring both light and heat generated carrier recombination. In this study, we have combined the simultaneous PA/PL measurements method with the time-resolved PL measurement to evaluate the dependence of radiative and non-radiative recombination lifetimes on the excitation carrier density in various InGaN-QW samples. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InGaN quantum well / carrier dynamics / internal quantum efficiency / recombination lifetime |
Paper # | ED2022-40,CPM2022-65,LQE2022-73 |
Date of Issue | 2022-11-17 (ED, CPM, LQE) |
Conference Information | |
Committee | CPM / ED / LQE |
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Conference Date | 2022/11/24(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
Paper Information | |
Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations |
Sub Title (in English) | |
Keyword(1) | InGaN quantum well |
Keyword(2) | carrier dynamics |
Keyword(3) | internal quantum efficiency |
Keyword(4) | recombination lifetime |
1st Author's Name | Keito Mori-Tamamura |
1st Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tech.) |
2nd Author's Name | Yuya Morimoto |
2nd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tech.) |
3rd Author's Name | Atsushi A. Yamaguchi |
3rd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tech.) |
4th Author's Name | Susumu Kusanagi |
4th Author's Affiliation | Sony Group Corporation(Sony) |
5th Author's Name | Yuya Kanitani |
5th Author's Affiliation | Sony Group Corporation(Sony) |
6th Author's Name | Yoshihiro Kudo |
6th Author's Affiliation | Sony Group Corporation(Sony) |
7th Author's Name | Shigetaka Tomiya |
7th Author's Affiliation | Sony Group Corporation(Sony) |
Date | 2022-11-25 |
Paper # | ED2022-40,CPM2022-65,LQE2022-73 |
Volume (vol) | vol.122 |
Number (no) | ED-271,CPM-272,LQE-273 |
Page | pp.pp.73-76(ED), pp.73-76(CPM), pp.73-76(LQE), |
#Pages | 4 |
Date of Issue | 2022-11-17 (ED, CPM, LQE) |