Presentation 2022-11-25
[Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations
Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We believe that an accurate estimation of the internal quantum efficiency (IQE) will lead to a comprehensive understanding of the carrier dynamics, and have proposed a simultaneous photoacoustic (PA) and photoluminescence (PL) measurements method to estimate the absolute value of IQE from experiments by measuring both light and heat generated carrier recombination. In this study, we have combined the simultaneous PA/PL measurements method with the time-resolved PL measurement to evaluate the dependence of radiative and non-radiative recombination lifetimes on the excitation carrier density in various InGaN-QW samples.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN quantum well / carrier dynamics / internal quantum efficiency / recombination lifetime
Paper # ED2022-40,CPM2022-65,LQE2022-73
Date of Issue 2022-11-17 (ED, CPM, LQE)

Conference Information
Committee CPM / ED / LQE
Conference Date 2022/11/24(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Winc Aichi (Aichi Industry & Labor Center)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.)
Vice Chair Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research)
Secretary Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.)
Assistant Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations
Sub Title (in English)
Keyword(1) InGaN quantum well
Keyword(2) carrier dynamics
Keyword(3) internal quantum efficiency
Keyword(4) recombination lifetime
1st Author's Name Keito Mori-Tamamura
1st Author's Affiliation Kanazawa Institute of Technology(Kanazawa Inst. of Tech.)
2nd Author's Name Yuya Morimoto
2nd Author's Affiliation Kanazawa Institute of Technology(Kanazawa Inst. of Tech.)
3rd Author's Name Atsushi A. Yamaguchi
3rd Author's Affiliation Kanazawa Institute of Technology(Kanazawa Inst. of Tech.)
4th Author's Name Susumu Kusanagi
4th Author's Affiliation Sony Group Corporation(Sony)
5th Author's Name Yuya Kanitani
5th Author's Affiliation Sony Group Corporation(Sony)
6th Author's Name Yoshihiro Kudo
6th Author's Affiliation Sony Group Corporation(Sony)
7th Author's Name Shigetaka Tomiya
7th Author's Affiliation Sony Group Corporation(Sony)
Date 2022-11-25
Paper # ED2022-40,CPM2022-65,LQE2022-73
Volume (vol) vol.122
Number (no) ED-271,CPM-272,LQE-273
Page pp.pp.73-76(ED), pp.73-76(CPM), pp.73-76(LQE),
#Pages 4
Date of Issue 2022-11-17 (ED, CPM, LQE)