| Presentation | 2022-11-25 LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as solid-state lighting, Li-Fi, and micro LED displays. In this study, we propose InGaN-based microlens structures fabricated by a thermal reflow method. The convex-lens like structures expose continuously changing off-angles, resulting in the multiwavelength emissions due to the In composition distributions. This technique will lead to tailored spectra syntheses through flexible structural control of the InGaN-based microstructures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride semiconductors / Metal-organic vapor phase epitaxy / Multiwavelength light emitters / Microstructures |
| Paper # | ED2022-43,CPM2022-68,LQE2022-76 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / ED / LQE |
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| Conference Date | 2022/11/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
| Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method |
| Sub Title (in English) | |
| Keyword(1) | Nitride semiconductors |
| Keyword(2) | Metal-organic vapor phase epitaxy |
| Keyword(3) | Multiwavelength light emitters |
| Keyword(4) | Microstructures |
| 1st Author's Name | Yoshinobu Matsuda |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Mitsuru Funato |
| 2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 3rd Author's Name | Yoichi Kawakami |
| 3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| Date | 2022-11-25 |
| Paper # | ED2022-43,CPM2022-68,LQE2022-76 |
| Volume (vol) | vol.122 |
| Number (no) | ED-271,CPM-272,LQE-273 |
| Page | pp.pp.85-88(ED), pp.85-88(CPM), pp.85-88(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |