Presentation 2022-11-11
[Invited Talk] SISPAD2022 Review
Satofumi Souma,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The 27th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022) was held on September 5 -- 7 in Granada (Spain). In this report, will review several papers presented at the conference in detail as well as discuss the overall trends of the technological topics included in this year's program.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SISPAD2022 / review
Paper # SDM2022-77
Date of Issue 2022-11-03 (SDM)

Conference Information
Committee SDM
Conference Date 2022/11/10(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Process, Device, Circuit simulation, etc.
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami(ASM Japan)
Secretary Tatsuya Usami(Tohoku Univ.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] SISPAD2022 Review
Sub Title (in English)
Keyword(1) SISPAD2022
Keyword(2) review
1st Author's Name Satofumi Souma
1st Author's Affiliation Kobe University(Kobe Univ.)
Date 2022-11-11
Paper # SDM2022-77
Volume (vol) vol.122
Number (no) SDM-247
Page pp.pp.61-67(SDM),
#Pages 7
Date of Issue 2022-11-03 (SDM)