| Presentation | 2022-11-25 Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi, Tetsuya Takeuchi, Narihito Okada, Kazuyuki Tadatomo, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a thickness of about 400 nm and a high InN mole fraction were grown on fully relaxed semipolar {11-22} Ga0.9In0.1N for application to long-wavelength GaN-LDs cladding layers. and evaluated them. It was confirmed that the grown AlInN had high InN molar fractions ranging from 0.306 to 0.444 and relatively flat surfaces with an RMS of less than 1.5 nm. In addition, AlInN layers were almost relaxed, and the surfaces were flat despite the presence of basal plane layer defects (BSFs) propagated from the substrate and many different dislocations. When compared to AlInN grown on c-plane GaN, it was confirmed that AlInN layers on semipolar {11-22}Ga0.9In0.1N had higher InN mole fraction even at the same growth temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semipolar / {11-22} / MOCVD / AlInN |
| Paper # | ED2022-42,CPM2022-67,LQE2022-75 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |
| Conference Information | |
| Committee | CPM / ED / LQE |
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| Conference Date | 2022/11/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Winc Aichi (Aichi Industry & Labor Center) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research) |
| Secretary | Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.) |
| Assistant | Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth temperature dependence of semipolar {11-22} AlInN/GaInN |
| Sub Title (in English) | |
| Keyword(1) | semipolar |
| Keyword(2) | {11-22} |
| Keyword(3) | MOCVD |
| Keyword(4) | AlInN |
| 1st Author's Name | Takahiro Fujisawa |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
| 2nd Author's Name | Taiki Nakabayashi |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
| 4th Author's Name | Makoto Miyoshi |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech.) |
| 5th Author's Name | Tetsuya Takeuchi |
| 5th Author's Affiliation | Meijo University(Meijo Univ.) |
| 6th Author's Name | Narihito Okada |
| 6th Author's Affiliation | Yamaguchi University(Yamaguchi Univ.) |
| 7th Author's Name | Kazuyuki Tadatomo |
| 7th Author's Affiliation | Yamaguchi University(Yamaguchi Univ.) |
| Date | 2022-11-25 |
| Paper # | ED2022-42,CPM2022-67,LQE2022-75 |
| Volume (vol) | vol.122 |
| Number (no) | ED-271,CPM-272,LQE-273 |
| Page | pp.pp.81-84(ED), pp.81-84(CPM), pp.81-84(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-11-17 (ED, CPM, LQE) |