Presentation 2022-11-24
Fabrication and device characteristics of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate
SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # ED2022-35,CPM2022-60,LQE2022-68
Date of Issue 2022-11-17 (ED, CPM, LQE)

Conference Information
Committee CPM / ED / LQE
Conference Date 2022/11/24(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Winc Aichi (Aichi Industry & Labor Center)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) / Junichi Takahara(Osaka Univ.)
Vice Chair Hideki Nakazawa(Hirosaki Univ.) / Seiya Sakai(Hokkaido Univ.) / Kosuke Nishimura(KDDI Research)
Secretary Hideki Nakazawa(Ehime Univ.) / Seiya Sakai(Kitami Inst. of Tech) / Kosuke Nishimura(Saga Univ.)
Assistant Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and device characteristics of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate
Sub Title (in English)
Keyword(1)
1st Author's Name SakuraTanaka
1st Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
2nd Author's Name Tomoyuki Kawaide
2nd Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
3rd Author's Name Akiyoshi Inoue
3rd Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
4th Author's Name Takashi Egawa
4th Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
5th Author's Name Makoto Miyoshi
5th Author's Affiliation Nagoya Institute of Technology(Nagoya Inst. Tech.)
Date 2022-11-24
Paper # ED2022-35,CPM2022-60,LQE2022-68
Volume (vol) vol.122
Number (no) ED-271,CPM-272,LQE-273
Page pp.pp.53-56(ED), pp.53-56(CPM), pp.53-56(LQE),
#Pages 4
Date of Issue 2022-11-17 (ED, CPM, LQE)