| Presentation | 2022-11-11 [Invited Talk] Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide Munetaka Noguchi, Hiroshi Watanabe, Koji Kita, Kazuyasu Nishikawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, the inversion layer mobility of the Si-face 4H-SiC MOSFET with nitrided gate oxide is examined under a wide range of acceptor concentration, and the limiting factors of the inversion layer mobility are modeled on the basis of these results. The effect of Coulomb scattering on the inversion layer mobility can be universally understood that it is increased when the inversion carriers get closer to the SiO2/SiC interface. Moreover, the method to experimentally extract the carrier scattering mechanisms which limit the inversion layer mobility is proposed, where the effect of Coulomb scattering on the inversion layer mobility is controlled by the acceptor concentration. Here, the framework of scattering mechanisms in inversion layer of SiC MOSFETs is assumed to be like that of Si MOSFETs. On the basis of this method, dominant scattering mechanisms which limit the inversion layer mobility of SiC MOSFETs are found to be phonon and Coulomb scatterings. This possibly suggests that the inversion layer mobility of SiC MOSFETs can be modeled without significantly changing the conventional framework of Si MOSFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / MOSFET / inversion layer mobility / Coulomb scattering / phonon scattering / Hall effect measurement |
| Paper # | SDM2022-75 |
| Date of Issue | 2022-11-03 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/11/10(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(ASM Japan) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | MOSFET |
| Keyword(3) | inversion layer mobility |
| Keyword(4) | Coulomb scattering |
| Keyword(5) | phonon scattering |
| Keyword(6) | Hall effect measurement |
| 1st Author's Name | Munetaka Noguchi |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Corp.) |
| 2nd Author's Name | Hiroshi Watanabe |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Corp.) |
| 3rd Author's Name | Koji Kita |
| 3rd Author's Affiliation | The University of Tokyo(Tokyo Univ.) |
| 4th Author's Name | Kazuyasu Nishikawa |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric Corp.) |
| Date | 2022-11-11 |
| Paper # | SDM2022-75 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-247 |
| Page | pp.pp.50-54(SDM), |
| #Pages | 5 |
| Date of Issue | 2022-11-03 (SDM) |