Presentation 2022-11-10
[Invited Talk] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computing algorithm
Satofumi Souma, Shingo Matsuo, Takuya Ishibashi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We present an implementation study of gate-type quantum computing algorithms for the purpose of semiconductor device simulations. As one of the representative quantum algorithms we consider the use of HHL (Harrow-Hassidim-Lloyd) algorithm to solve the Poisson equation in semiconductor nanowire p-n junction, especially under the Neumann boundary condition that the electric field is zero at the electrode boundaries. Our proposed model of the quantum gate to implement the Neumann boundary condition has been found to successfully reproduce the solution obtained by conventional method.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Device simulation / quantum computing
Paper # SDM2022-69
Date of Issue 2022-11-03 (SDM)

Conference Information
Committee SDM
Conference Date 2022/11/10(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Process, Device, Circuit simulation, etc.
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami(ASM Japan)
Secretary Tatsuya Usami(Tohoku Univ.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computing algorithm
Sub Title (in English)
Keyword(1) Device simulation
Keyword(2) quantum computing
1st Author's Name Satofumi Souma
1st Author's Affiliation Kobe University(Kobe Univ.)
2nd Author's Name Shingo Matsuo
2nd Author's Affiliation Kobe University(Kobe Univ.)
3rd Author's Name Takuya Ishibashi
3rd Author's Affiliation Kobe University(Kobe Univ.)
Date 2022-11-10
Paper # SDM2022-69
Volume (vol) vol.122
Number (no) SDM-247
Page pp.pp.23-27(SDM),
#Pages 5
Date of Issue 2022-11-03 (SDM)