| Presentation | 2022-11-11 [Invited Talk] Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/read-out qubits at the cryogenic temperature below several Kelvin. Thus, a physical understanding of MOSFET operation at the cryogenic temperature is required for designing the Cryo-CMOS circuit. Various device parameters are known to deviate from conventional theoretical values in cryogenic operation, and thus elucidation of the physical mechanism is required. Inversion layer mobility, which determines the drive current of the MOSFET, is limited by the Coulomb and surface roughness scattering at the cryogenic temperature. However, the carrier scattering mechanism at the temperature of several Kelvin or less has not been sufficiently discussed and the physics-based cryogenic mobility model has not been established. In this study, we focused on the effect of interface trap charges as Coulomb scatterers on cryogenic mobility to reveal the physical origin of Coulomb scattering. We systematically investigated the correlation between the interface trap charges and the electron mobility at 2.5 K by utilizing Si-MOSFETs fabricated on different surface orientations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum computer / Cryo-CMOS / Electron mobility / Surface orientation / Coulomb scattering |
| Paper # | SDM2022-74 |
| Date of Issue | 2022-11-03 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/11/10(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(ASM Japan) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Understanding of Electron Mobility Limiting Factor in Cryo-CMOS |
| Sub Title (in English) | |
| Keyword(1) | Quantum computer |
| Keyword(2) | Cryo-CMOS |
| Keyword(3) | Electron mobility |
| Keyword(4) | Surface orientation |
| Keyword(5) | Coulomb scattering |
| 1st Author's Name | Hiroshi Oka |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Takumi Inaba |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Shota Iizuka |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Hidehiro Asai |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Kimihiko Kato |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Takahiro Mori |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2022-11-11 |
| Paper # | SDM2022-74 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-247 |
| Page | pp.pp.49-49(SDM), |
| #Pages | 1 |
| Date of Issue | 2022-11-03 (SDM) |