| Presentation | 2022-11-10 [Invited Talk] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Extremely-thin-body (ETB) channels are regarded as the most promising channel structure for future CMOS technology nodes. In parallel, CMOS operation at low temperatures is demanded for the quantum computing and data center applications. Here, surface roughness (SR) scattering is a dominant scattering mechanism for such ETB channels and at low temperature. However, there is a challenge for the conventional linear model of SR scattering that the excessive roughness parameters are used in the linear model to explain the experiments. In this study, we have proposed a new model of surface roughness scattering including the nonlinearity of SR scattering, which can explain the experimental mobility of SOI, GOI and InAs-OI nMOSFETs by using roughness parameters obtained experimentally from TEM images. The material and surface orientation in ETB channels is optimized by calculating the mobility based on our nonlinear model. As a result, the anisotropic valley with heavy confinement mass is essentially important to suppress the SR scattering because of the low quantization energy fluctuation. In particular, (111) GOI is most expected thanks to the strong anisotropic L valley and have the excellent SR-limited and phonon-limited electron mobility even in the 2-nm-thick channels, which is an advantage over 2D materials. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Extremely-Thin-Body / Nanosheet / MOSFET / Surface Roughness Scattering / Mobility |
| Paper # | SDM2022-65 |
| Date of Issue | 2022-11-03 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/11/10(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(ASM Japan) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering |
| Sub Title (in English) | |
| Keyword(1) | Extremely-Thin-Body |
| Keyword(2) | Nanosheet |
| Keyword(3) | MOSFET |
| Keyword(4) | Surface Roughness Scattering |
| Keyword(5) | Mobility |
| 1st Author's Name | Kei Sumita |
| 1st Author's Affiliation | University of Tokyo(Univ. Tokyo) |
| 2nd Author's Name | Min-Soo Kang |
| 2nd Author's Affiliation | University of Tokyo(Univ. Tokyo) |
| 3rd Author's Name | Chia-Tsong Chen |
| 3rd Author's Affiliation | University of Tokyo(Univ. Tokyo) |
| 4th Author's Name | Kasidit Toprasertpong |
| 4th Author's Affiliation | University of Tokyo(Univ. Tokyo) |
| 5th Author's Name | Mitsuru Takenaka |
| 5th Author's Affiliation | University of Tokyo(Univ. Tokyo) |
| 6th Author's Name | Shinichi Takagi |
| 6th Author's Affiliation | University of Tokyo(Univ. Tokyo) |
| Date | 2022-11-10 |
| Paper # | SDM2022-65 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-247 |
| Page | pp.pp.7-12(SDM), |
| #Pages | 6 |
| Date of Issue | 2022-11-03 (SDM) |