| Presentation | 2022-10-21 Investigation of layer structure for controlling optical confinement factor of active layer in direct bonding GaInAsP/SOI optical devices Ryuya Sasaki, Tsukuru Katsuyama, Yoshitaka Ooiso, Takehiko kikuchi, Moataz Eissa, Tomohiro Amemiya, Nobuhiko Nishiyama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Integration technology is important to realize miniaturization and low power consumption of optical transceivers. To fabricate direct bonding GaInAsP/SOI optical devices with different characteristics from the same epi-wafer, we investigated epitaxial layer structures with a large control range of active-layer optical confinement coefficients in the Si waveguide width by mode-field calculation using simulations. As a result, assuming a superlattice layer thickness of 604 nm, the optical confinement factor can be varied from 2.0 to 4.2 % by adjusting the Si waveguide width in the range of 0 to 5 μm. By applying this method to a hybrid SOA, the saturation optical output power/gain is expected to be 20 dBm/12 dB~13 dBm/32 dB, and the characteristics are expected to be controllable over a wide range. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Photonic Integrated Circuit / Silicon photonics |
| Paper # | OCS2022-28,OPE2022-74,LQE2022-37 |
| Date of Issue | 2022-10-13 (OCS, OPE, LQE) |
| Conference Information | |
| Committee | OPE / OCS / LQE |
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| Conference Date | 2022/10/20(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Toshikazu Hashimoto(NTT) / Takeshi Hoshida(Fujitsu) / Junichi Takahara(Osaka Univ.) |
| Vice Chair | Taro Arakawa(Yokohama National Univ.) / / Kosuke Nishimura(KDDI Research) |
| Secretary | Taro Arakawa(Kochi Univ. of Tech) / (Mitsubishi Electric) / Kosuke Nishimura(NTT) |
| Assistant | Yuhei Ishizaka(Kanto Gakuin Univ.) / Takeshi Umeki(NTT) / / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on OptoElectronics / Technical Committee on Optical Communication Systems / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of layer structure for controlling optical confinement factor of active layer in direct bonding GaInAsP/SOI optical devices |
| Sub Title (in English) | |
| Keyword(1) | Photonic Integrated Circuit |
| Keyword(2) | Silicon photonics |
| 1st Author's Name | Ryuya Sasaki |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 2nd Author's Name | Tsukuru Katsuyama |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 3rd Author's Name | Yoshitaka Ooiso |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 4th Author's Name | Takehiko kikuchi |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 5th Author's Name | Moataz Eissa |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 6th Author's Name | Tomohiro Amemiya |
| 6th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 7th Author's Name | Nobuhiko Nishiyama |
| 7th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2022-10-21 |
| Paper # | OCS2022-28,OPE2022-74,LQE2022-37 |
| Volume (vol) | vol.122 |
| Number (no) | OCS-216,OPE-217,LQE-218 |
| Page | pp.pp.60-63(OCS), pp.60-63(OPE), pp.60-63(LQE), |
| #Pages | 4 |
| Date of Issue | 2022-10-13 (OCS, OPE, LQE) |