Presentation 2022-10-21
Low energy direct modulation of a 5-um-long active region on Si DBR laser
Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to introduce optical interconnects into short-distance interconnects, ultra-low power consumption lasers are needed. We tried to reduce the power consumption of lasers by shortening the length of the active region and suppressing the loss of the DBRs by using an InGaAsP waveguide. We have successfully achieved continuous wave operation at room temperature and direct modulation of DBR lasers with the active layer lengths between 5 and 80 um. For a laser with an active layer length of 5 um, we observed the threshold current of 51 uA, modulation efficiency of 18.9 GHz/mA0.5, and 24-fJ/bit energy cost with 10-Gbit/s NRZ signal modulation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DBR laser / membrane laser / short cavity laser / III-V on Si / wafer bonding
Paper # OCS2022-36,OPE2022-82,LQE2022-45
Date of Issue 2022-10-13 (OCS, OPE, LQE)

Conference Information
Committee OPE / OCS / LQE
Conference Date 2022/10/20(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Toshikazu Hashimoto(NTT) / Takeshi Hoshida(Fujitsu) / Junichi Takahara(Osaka Univ.)
Vice Chair Taro Arakawa(Yokohama National Univ.) / / Kosuke Nishimura(KDDI Research)
Secretary Taro Arakawa(Kochi Univ. of Tech) / (Mitsubishi Electric) / Kosuke Nishimura(NTT)
Assistant Yuhei Ishizaka(Kanto Gakuin Univ.) / Takeshi Umeki(NTT) / / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on OptoElectronics / Technical Committee on Optical Communication Systems / Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low energy direct modulation of a 5-um-long active region on Si DBR laser
Sub Title (in English)
Keyword(1) DBR laser
Keyword(2) membrane laser
Keyword(3) short cavity laser
Keyword(4) III-V on Si
Keyword(5) wafer bonding
1st Author's Name Erina Kanno
1st Author's Affiliation NTT Corporation(NTT)
2nd Author's Name Koji Takeda
2nd Author's Affiliation NTT Corporation(NTT)
3rd Author's Name Takuro Fujii
3rd Author's Affiliation NTT Corporation(NTT)
4th Author's Name Takaaki Kakitsuka
4th Author's Affiliation NTT Corporation(NTT)
5th Author's Name Shinji Matsuo
5th Author's Affiliation NTT Corporation(NTT)
Date 2022-10-21
Paper # OCS2022-36,OPE2022-82,LQE2022-45
Volume (vol) vol.122
Number (no) OCS-216,OPE-217,LQE-218
Page pp.pp.100-103(OCS), pp.100-103(OPE), pp.100-103(LQE),
#Pages 4
Date of Issue 2022-10-13 (OCS, OPE, LQE)