Presentation | 2022-10-21 Low energy direct modulation of a 5-um-long active region on Si DBR laser Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to introduce optical interconnects into short-distance interconnects, ultra-low power consumption lasers are needed. We tried to reduce the power consumption of lasers by shortening the length of the active region and suppressing the loss of the DBRs by using an InGaAsP waveguide. We have successfully achieved continuous wave operation at room temperature and direct modulation of DBR lasers with the active layer lengths between 5 and 80 um. For a laser with an active layer length of 5 um, we observed the threshold current of 51 uA, modulation efficiency of 18.9 GHz/mA0.5, and 24-fJ/bit energy cost with 10-Gbit/s NRZ signal modulation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | DBR laser / membrane laser / short cavity laser / III-V on Si / wafer bonding |
Paper # | OCS2022-36,OPE2022-82,LQE2022-45 |
Date of Issue | 2022-10-13 (OCS, OPE, LQE) |
Conference Information | |
Committee | OPE / OCS / LQE |
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Conference Date | 2022/10/20(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Toshikazu Hashimoto(NTT) / Takeshi Hoshida(Fujitsu) / Junichi Takahara(Osaka Univ.) |
Vice Chair | Taro Arakawa(Yokohama National Univ.) / / Kosuke Nishimura(KDDI Research) |
Secretary | Taro Arakawa(Kochi Univ. of Tech) / (Mitsubishi Electric) / Kosuke Nishimura(NTT) |
Assistant | Yuhei Ishizaka(Kanto Gakuin Univ.) / Takeshi Umeki(NTT) / / Yoshiaki Nishijima(Yokohama National Univ.) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
Paper Information | |
Registration To | Technical Committee on OptoElectronics / Technical Committee on Optical Communication Systems / Technical Committee on Lasers and Quantum Electronics |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low energy direct modulation of a 5-um-long active region on Si DBR laser |
Sub Title (in English) | |
Keyword(1) | DBR laser |
Keyword(2) | membrane laser |
Keyword(3) | short cavity laser |
Keyword(4) | III-V on Si |
Keyword(5) | wafer bonding |
1st Author's Name | Erina Kanno |
1st Author's Affiliation | NTT Corporation(NTT) |
2nd Author's Name | Koji Takeda |
2nd Author's Affiliation | NTT Corporation(NTT) |
3rd Author's Name | Takuro Fujii |
3rd Author's Affiliation | NTT Corporation(NTT) |
4th Author's Name | Takaaki Kakitsuka |
4th Author's Affiliation | NTT Corporation(NTT) |
5th Author's Name | Shinji Matsuo |
5th Author's Affiliation | NTT Corporation(NTT) |
Date | 2022-10-21 |
Paper # | OCS2022-36,OPE2022-82,LQE2022-45 |
Volume (vol) | vol.122 |
Number (no) | OCS-216,OPE-217,LQE-218 |
Page | pp.pp.100-103(OCS), pp.100-103(OPE), pp.100-103(LQE), |
#Pages | 4 |
Date of Issue | 2022-10-13 (OCS, OPE, LQE) |