| Presentation | 2022-09-15 Power characteristics of 5.8GHz band 5W rectenna with a GaAs GAD Naoki Furutani, Kaito Uchiyama, Fumiya Komatsu, Kouichi Kikkawa, Naoki Sakai, Kenji Itoh, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this report, power characteristics of the 5.8 GHz band 5 W rectenna are discussed. The rectenna is consisting of the gated anode diode (GAD) configured with the GaAs E-pHEMT for improving power characteristics. At first, a measured DC characteristic of the GAD and its saturation is demonstrated. In the saturation region, a differential resistance of the GAD is increased and makes degradation of rectification efficiency. In the discussions, GAD currents’ waveforms with different gate widths are demonstrated, and their influences on power characteristics are discussed. As a result, gate width of 1.2 mm is designed for the rectenna. In experimental investigation, the rectenna consisting of a GaAs rectenna IC and a high-impedance antenna is fabricated on the aluminum nitride substrate that has low thermal resistivity as metal plates. Measured rectification efficiency of 85.2 % at input power of 5 W is obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | RF rectifier / Gated anode diode / Dipole antenna / Rectenna |
| Paper # | MW2022-74 |
| Date of Issue | 2022-09-07 (MW) |
| Conference Information | |
| Committee | AP / MW |
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| Conference Date | 2022/9/14(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | The Museum of Art, EHIME |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, Millimeter wave |
| Chair | Hiroshi Yamada(Niigata Univ.) / Noriharu Suematsu(Tohoku Univ.) |
| Vice Chair | Mitoshi Fujimoto(Fukui Univ) / Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Hideyuki Nakamizo(Mitsubishi Electric) |
| Secretary | Mitoshi Fujimoto(National Defense Academy) / Tadashi Kawai(Mitsubishi Electric) / Kensuke Okubo(Univ. of Electro-Comm) / Hideyuki Nakamizo(Toshiba) |
| Assistant | Tomoki Murakami(NTT) / Naoki Hasegawa(Softbank) / Kosuke Katayama(NIT Tokuyama College) |
| Paper Information | |
| Registration To | Technical Committee on Antennas and Propagation / Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Power characteristics of 5.8GHz band 5W rectenna with a GaAs GAD |
| Sub Title (in English) | |
| Keyword(1) | RF rectifier |
| Keyword(2) | Gated anode diode |
| Keyword(3) | Dipole antenna |
| Keyword(4) | Rectenna |
| 1st Author's Name | Naoki Furutani |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Kaito Uchiyama |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Fumiya Komatsu |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 4th Author's Name | Kouichi Kikkawa |
| 4th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 5th Author's Name | Naoki Sakai |
| 5th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 6th Author's Name | Kenji Itoh |
| 6th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| Date | 2022-09-15 |
| Paper # | MW2022-74 |
| Volume (vol) | vol.122 |
| Number (no) | MW-183 |
| Page | pp.pp.30-35(MW), |
| #Pages | 6 |
| Date of Issue | 2022-09-07 (MW) |