| Presentation | 2022-08-08 [Invited Talk] Low-Noise Multi-Gate Pixel Transistor for Sub-Micron Pixel CMOS Image Sensors Naohiko Kimizuka, Shota Kitamura, Akiko Honjo, Koichi Baba, Toshihiro Kurobe, Hideomi Kumano, Takuya Toyohuku, Kouhei Takeuchi, Shota Nishimura, Akihiko Kato, Tomoyuki Hirano, Yusuke Oike, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The pixel size of CMOS image sensor (CIS) continues to be rapidly decreasing due to strong demand from mobile applications. As a result, the area in which the pixel transistor can be integrated also decrease, making it difficult to maintain the transistor size (channel length and width). In particular, the pixel transistor size of a source follower (SF) amplifier determines the noise performance. Therefore, at this time, we propose a new low-noise multi-gate pixel transistor, specially customized for an SF amplifier of CIS. The random telegraph signal (RTS) noise and 1/f noise have been improved by maximizing the effective channel width and by not performing impurity doping into the channel. Compared to a conventional planar-type pixel transistor with same footprint, RTS noise and 1/f noise have been reduced by 91% and 43%, respectively. The transconductance has been improved by 43%, which contributes to reduce thermal noise. We could evaluate imaging characteristics using a prototype with 0.7?m pixel, having new multi-gate pixel transistor we have developed. It was revealed that proposed multi-gate structure dedicated to pixel transistor is a promising candidate to solve issues emerging from pixel size shrinkage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pixel transistor / RTS noise / 1/f noise / multi-gate structure |
| Paper # | SDM2022-34,ICD2022-2 |
| Date of Issue | 2022-08-01 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
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| Conference Date | 2022/8/8(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Masafumi Takahashi(Kioxia) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 秋田 純一(金沢大) |
| Vice Chair | Makoto Ikeda(Univ. of Tokyo) / Tatsuya Usami(ASM Japan) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
| Secretary | Makoto Ikeda(Shinshu Univ.) / Tatsuya Usami(TSMC) / 池辺 将之(Tohoku Univ.) / 廣瀬 裕(Panasonic) |
| Assistant | Jun Shiomi(Osaka Univ.) / Yoshiaki Yoshihara(キオクシア) / Takeshi Kuboki(Sony Semiconductor Solutions) / Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) / 山下 雄一郎(TSMC) / 大倉 俊介(立命館大) / 竹本 良章(メムスコア) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Low-Noise Multi-Gate Pixel Transistor for Sub-Micron Pixel CMOS Image Sensors |
| Sub Title (in English) | |
| Keyword(1) | pixel transistor |
| Keyword(2) | RTS noise |
| Keyword(3) | 1/f noise |
| Keyword(4) | multi-gate structure |
| 1st Author's Name | Naohiko Kimizuka |
| 1st Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 2nd Author's Name | Shota Kitamura |
| 2nd Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 3rd Author's Name | Akiko Honjo |
| 3rd Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 4th Author's Name | Koichi Baba |
| 4th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 5th Author's Name | Toshihiro Kurobe |
| 5th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 6th Author's Name | Hideomi Kumano |
| 6th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 7th Author's Name | Takuya Toyohuku |
| 7th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 8th Author's Name | Kouhei Takeuchi |
| 8th Author's Affiliation | Sony Semiconductor Manufacturing(Sony Semiconductor Manufacturing) |
| 9th Author's Name | Shota Nishimura |
| 9th Author's Affiliation | Sony Semiconductor Manufacturing(Sony Semiconductor Manufacturing) |
| 10th Author's Name | Akihiko Kato |
| 10th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 11th Author's Name | Tomoyuki Hirano |
| 11th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| 12th Author's Name | Yusuke Oike |
| 12th Author's Affiliation | Sony Semiconductor Solutions(Sony Semiconductor Solutions) |
| Date | 2022-08-08 |
| Paper # | SDM2022-34,ICD2022-2 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-148,ICD-149 |
| Page | pp.pp.7-7(SDM), pp.7-7(ICD), |
| #Pages | 1 |
| Date of Issue | 2022-08-01 (SDM, ICD) |