| Presentation | 2022-08-09 [Invited Talk] Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale quantum computer. At the cryogenic temperature, inversion layer carrier mobility, which determines the drive current of the MOSFET, is limited by the Coulomb and surface roughness scattering. Thus, physical understanding of these scattering factors at the cryogenic temperature becomes critically important. In particular, the temperature dependence of Coulomb scattering is more complicated than other scattering factors, and the physical origin of Coulomb scattering at the cryogenic temperature has not been fully discussed. In this study, we investigated the effect of interface charge as a Coulomb scatterer on cryogenic electron mobility by utilizing Si MOSFETs fabricated on different surface orientations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum computer / Cryogenic MOSFET, / Electron mobility / Surface orientation / Coulomb scattering |
| Paper # | SDM2022-46,ICD2022-14 |
| Date of Issue | 2022-08-01 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
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| Conference Date | 2022/8/8(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Masafumi Takahashi(Kioxia) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 秋田 純一(金沢大) |
| Vice Chair | Makoto Ikeda(Univ. of Tokyo) / Tatsuya Usami(ASM Japan) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
| Secretary | Makoto Ikeda(Shinshu Univ.) / Tatsuya Usami(TSMC) / 池辺 将之(Tohoku Univ.) / 廣瀬 裕(Panasonic) |
| Assistant | Jun Shiomi(Osaka Univ.) / Yoshiaki Yoshihara(キオクシア) / Takeshi Kuboki(Sony Semiconductor Solutions) / Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) / 山下 雄一郎(TSMC) / 大倉 俊介(立命館大) / 竹本 良章(メムスコア) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation |
| Sub Title (in English) | |
| Keyword(1) | Quantum computer |
| Keyword(2) | Cryogenic MOSFET, |
| Keyword(3) | Electron mobility |
| Keyword(4) | Surface orientation |
| Keyword(5) | Coulomb scattering |
| 1st Author's Name | Hiroshi Oka |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Takumi Inaba |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Shota Iizuka |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Hidehiro Asai |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Kimihiko Kato |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Takahiro Mori |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2022-08-09 |
| Paper # | SDM2022-46,ICD2022-14 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-148,ICD-149 |
| Page | pp.pp.54-59(SDM), pp.54-59(ICD), |
| #Pages | 6 |
| Date of Issue | 2022-08-01 (SDM, ICD) |