| Presentation | 2022-08-09 TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2022-47,ICD2022-15 |
| Date of Issue | 2022-08-01 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
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| Conference Date | 2022/8/8(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Masafumi Takahashi(Kioxia) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 秋田 純一(金沢大) |
| Vice Chair | Makoto Ikeda(Univ. of Tokyo) / Tatsuya Usami(ASM Japan) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
| Secretary | Makoto Ikeda(Shinshu Univ.) / Tatsuya Usami(TSMC) / 池辺 将之(Tohoku Univ.) / 廣瀬 裕(Panasonic) |
| Assistant | Jun Shiomi(Osaka Univ.) / Yoshiaki Yoshihara(キオクシア) / Takeshi Kuboki(Sony Semiconductor Solutions) / Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(SanDisk) / 山下 雄一郎(TSMC) / 大倉 俊介(立命館大) / 竹本 良章(メムスコア) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Hidehiro Asai |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Takumi Inaba |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Junichi Hattori |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Koichi Fukuda |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Hiroshi Oka |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Takahiro Mori |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2022-08-09 |
| Paper # | SDM2022-47,ICD2022-15 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-148,ICD-149 |
| Page | pp.pp.60-63(SDM), pp.60-63(ICD), |
| #Pages | 4 |
| Date of Issue | 2022-08-01 (SDM, ICD) |