Presentation 2022-06-21
[Invited Lecture] Study on TMD mixed crystal characteristics and novel precursor for low-temperature CVD.
Atsushi Ogura, Ryo Yokogawa, Hitoshi Wakabayashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2022-28
Date of Issue 2022-06-14 (SDM)

Conference Information
Committee SDM
Conference Date 2022/6/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] Study on TMD mixed crystal characteristics and novel precursor for low-temperature CVD.
Sub Title (in English)
Keyword(1)
1st Author's Name Atsushi Ogura
1st Author's Affiliation Meiji University, School of Science and Technologyering/Meiji Renewable Energy Laboratory(Meiji Univ., MREL)
2nd Author's Name Ryo Yokogawa
2nd Author's Affiliation Meiji University, School of Science and Technologyering/Meiji Renewable Energy Laboratory(Meiji Univ., MREL)
3rd Author's Name Hitoshi Wakabayashi
3rd Author's Affiliation Tokyo Techinical Institute(Tokyo Tech.)
Date 2022-06-21
Paper # SDM2022-28
Volume (vol) vol.122
Number (no) SDM-84
Page pp.pp.16-19(SDM),
#Pages 4
Date of Issue 2022-06-14 (SDM)