Presentation 2022-06-21
[Invited Lecture] Electronic properties of heterostructures of transition metal dichalchogenides
Mina Maruyama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English) transition metal dichalchogenides / heterostructure / electronic structure
Paper # SDM2022-29
Date of Issue 2022-06-14 (SDM)

Conference Information
Committee SDM
Conference Date 2022/6/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] Electronic properties of heterostructures of transition metal dichalchogenides
Sub Title (in English)
Keyword(1) transition metal dichalchogenides
Keyword(2) heterostructure
Keyword(3) electronic structure
1st Author's Name Mina Maruyama
1st Author's Affiliation University of Tsukuba(Univ. of Tsukuba)
Date 2022-06-21
Paper # SDM2022-29
Volume (vol) vol.122
Number (no) SDM-84
Page pp.pp.20-22(SDM),
#Pages 3
Date of Issue 2022-06-14 (SDM)