| Presentation | 2022-06-21 Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Orthorhombic (O)Hf-based oxide exhibits ferroelectricity even in a thin film with a thickness of 5-10 nm. However, there are some issues of formation and stabilization, because the O phase is a metastable phase. In this study, a metal Hf layer was deposited on a Si substrate with different surface orientations, and then, a Hf oxide layer was formed by thermal oxidation of the Hf layer. Chemical bonding features, composition and crystalline structures were investigated using x-ray photoelectron spectroscopy (XPS) and grazing incident x-ray diffraction (GIXRD). Diffusion of Si into the Hf-oxide layer on a Si(111) substrate was suppressed by comparing with that formed on a Si(100) substrate. The crystalline structures of the Hf-oxide layer on the Si(111) substrate are mainly O and tetragonal phases, suppressing monoclinic phase by comparing with on the Si(100) substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hafnium / Ferroelectricity / Crystalline structure / Chemical bonding feature |
| Paper # | SDM2022-26 |
| Date of Issue | 2022-06-14 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation |
| Sub Title (in English) | |
| Keyword(1) | Hafnium |
| Keyword(2) | Ferroelectricity |
| Keyword(3) | Crystalline structure |
| Keyword(4) | Chemical bonding feature |
| 1st Author's Name | Wataru Yasuda |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Noriyuki Taoka |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Katsunori Makihara |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2022-06-21 |
| Paper # | SDM2022-26 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-84 |
| Page | pp.pp.9-12(SDM), |
| #Pages | 4 |
| Date of Issue | 2022-06-14 (SDM) |