| Presentation | 2022-06-21 Self-formation of Ge1-xSnx nanodots on insulator for multi-layer Ge1-xSnx quantum dots structure Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Osamu Nakatsuka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Germanium-tin (Ge1−xSnx) quantum dots (QDs) are promising materials as a light-emitting device for optical wiring technology of LSI (1.55-μm waveband) because of those variable bandgaps by the Sn content and the dot size, and the transformability to the direct transition semiconductor for the Sn content over 10%. In this study, to realize the multilayer QDs structure, we examined the self-formation of Ge1−xSnx QDs on insulators by the control of surface migration of Sn atoms. The results revealed the control of the introduced Sn content and the deposition temperature of Ge1−xSnx enables the self-formation of the Ge1−xSnx microcrystals (grains) with Sn content over 10%. Importantly, for the 5-nm-thick deposition case, by controlling the deposition temperature, we can form the isolated nanocrystals but coexisting amorphous layer and the island structure with nanocrystals in contact with each other. This suggests the thinner Ge1−xSnx deposition under a further controlled condition will realize the isolated Ge1−xSnx QDs structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ge1-xSnx / quantum dots / self-formation / surface migration |
| Paper # | SDM2022-25 |
| Date of Issue | 2022-06-14 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-formation of Ge1-xSnx nanodots on insulator for multi-layer Ge1-xSnx quantum dots structure |
| Sub Title (in English) | |
| Keyword(1) | Ge1-xSnx |
| Keyword(2) | quantum dots |
| Keyword(3) | self-formation |
| Keyword(4) | surface migration |
| 1st Author's Name | Kaoru Hashimoto |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Shigehisa Shibayama |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Koji Asaka |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Osamu Nakatsuka |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2022-06-21 |
| Paper # | SDM2022-25 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-84 |
| Page | pp.pp.5-8(SDM), |
| #Pages | 4 |
| Date of Issue | 2022-06-14 (SDM) |