Presentation 2022-06-21
[Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property
Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka, Mitsuaki Shimizu, Osamu Nakatsuka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2022-24
Date of Issue 2022-06-14 (SDM)

Conference Information
Committee SDM
Conference Date 2022/6/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property
Sub Title (in English)
Keyword(1)
1st Author's Name Shigehisa Shibayama
1st Author's Affiliation Nagoya University(Nagoya Univ.)
2nd Author's Name Takuma Doi
2nd Author's Affiliation Nagoya University(Nagoya Univ.)
3rd Author's Name Mitsuo Sakashita
3rd Author's Affiliation Nagoya University(Nagoya Univ.)
4th Author's Name Noriyuki Taoka
4th Author's Affiliation Nagoya University(Nagoya Univ.)
5th Author's Name Mitsuaki Shimizu
5th Author's Affiliation AIST-NU GaN-OIL(AIST)
6th Author's Name Osamu Nakatsuka
6th Author's Affiliation Nagoya University(Nagoya Univ.)
Date 2022-06-21
Paper # SDM2022-24
Volume (vol) vol.122
Number (no) SDM-84
Page pp.pp.1-4(SDM),
#Pages 4
Date of Issue 2022-06-14 (SDM)