Presentation 2022-06-21
Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing
Taiki Sakai, Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2022-32
Date of Issue 2022-06-14 (SDM)

Conference Information
Committee SDM
Conference Date 2022/6/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing
Sub Title (in English)
Keyword(1)
1st Author's Name Taiki Sakai
1st Author's Affiliation Nagoya University(Nagoya Univ.)
2nd Author's Name Keigo Matsushita
2nd Author's Affiliation Nagoya University(Nagoya Univ.)
3rd Author's Name Akio Ohta
3rd Author's Affiliation Nagoya University(Nagoya Univ.)
4th Author's Name Noriyuki Taoka
4th Author's Affiliation Nagoya University(Nagoya Univ.)
5th Author's Name Katsunori Makihara
5th Author's Affiliation Nagoya University(Nagoya Univ.)
6th Author's Name Seiichi Miyazaki
6th Author's Affiliation Nagoya University(Nagoya Univ.)
Date 2022-06-21
Paper # SDM2022-32
Volume (vol) vol.122
Number (no) SDM-84
Page pp.pp.31-34(SDM),
#Pages 4
Date of Issue 2022-06-14 (SDM)